CUS05S30 Diode Datasheet

CUS05S30 Datasheet PDF, Equivalent


Part Number

CUS05S30

Description

Schottky Barrier Diode

Manufacture

Toshiba

Total Page 5 Pages
Datasheet
Download CUS05S30 Datasheet


CUS05S30
Schottky Barrier Diode Silicon Epitaxial
CUS05S30
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
CUS05S30
1: Cathode
2: Anode
USC
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
30 V
Reverse voltage
VR 20
Average rectified current
IO (Note 1)
0.5
A
Non-repetitive peak forward surge current
IFSM (Note 2)
5
Junction temperature
Tj 125
Storage temperature
Tstg -55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Note 2: Measured with a 10 ms pulse.
Start of commercial production
2013-09
1 2014-04-07
Rev.3.0

CUS05S30
4. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage
Forward voltage
Reverse current
Reverse current
Total capacitance
Symbol
Test Condition
VF(1)
VF(2)
IR(1)
IR(2)
Ct
IF = 0.1 A (Pulse test)
IF = 0.5 A (Pulse test)
VR = 10 V (Pulse test)
VR = 30 V (Pulse test)
VR = 0 V, f = 1 MHz
Min
CUS05S30
Typ. Max Unit
0.28 0.34
0.41 0.47
0.15
0.30
55
V
V
mA
mA
pF
5. Marking
Marking Code
8A
Fig. 5.1 Marking
Part Number
CUS05S30
6. Usage Considerations
• Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
7. Land Pattern Dimensions (for reference only)
Fig. 7.1 Land Pattern Dimensions for Reference Only (Unit: mm)
2 2014-04-07
Rev.3.0


Features Schottky Barrier Diode Silicon Epitaxial CUS05S30 1. Applications • High-Spee d Switching 2. Packaging and Internal C ircuit CUS05S30 1: Cathode 2: Anode USC 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rati ng Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rec tified current IO (Note 1) 0.5 A No n-repetitive peak forward surge current IFSM (Note 2) 5 Junction temperatur e Tj 125  Storage temperature Tst g -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage an d the significant change in temperature , etc.) may cause this product to decre ase in the reliability significantly ev en if the operating conditions (i.e. op erating temperature/current/voltage, et c.) are within the absolute maximum rat ings. Please design the appropriate rel iability upon reviewing the Toshiba Sem iconductor Reliability Handbook ("Handling Precautions"/"Derating Con.
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