EPC2034

eGaN® FET DATASHEET EPC2034 – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 10 mΩ ID , 48 A D G S EPC2034 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings PARAMETER VDS Drain-to-Source Voltage (Continuous) ID Continuous (TA = 25°C, RθJA = 3°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VALUE UNIT 200 V 48 A 200 6 V -4 –40 to 150 °C –40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 0.45 RθJB Thermal Resistance, Junction-to-Board 3.9 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 45 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details PARAMETER Static Characteristics (TJ= 25°C unless otherwise stated) TEST CONDITIONS BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.6 mA IDSS Drain-Source Leakage VDS = 160 V, VGS = 0 V Gate-to-Source ...