EPC2034 Transistor Datasheet

EPC2034 Datasheet PDF, Equivalent


Part Number

EPC2034

Description

Enhancement Mode Power Transistor

Manufacture

EPC

Total Page 7 Pages
PDF Download
Download EPC2034 Datasheet PDF


EPC2034
eGaN® FET DATASHEET
EPC2034 – Enhancement Mode Power Transistor
VDS , 200 V
RDS(on) , 10 mΩ
ID , 48 A
D
G
S
EPC2034
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VDS Drain-to-Source Voltage (Continuous)
ID
Continuous (TA = 25°C, RθJA = 3°C/W)
Pulsed (25°C, TPULSE = 300 µs)
VGS
Gate-to-Source Voltage
Gate-to-Source Voltage
TJ Operating Temperature
TSTG Storage Temperature
VALUE
200
48
200
6
-4
–40 to 150
–40 to 150
UNIT
V
A
V
°C
Thermal Characteristics
PARAMETER
TYP UNIT
RθJC Thermal Resistance, Junction-to-Case
0.45
RθJB Thermal Resistance, Junction-to-Board
3.9 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
45
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details
PARAMETER
Static Characteristics (TJ= 25°C unless otherwise stated)
TEST CONDITIONS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 0.6 mA
IDSS Drain-Source Leakage
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VDS = 160 V, VGS = 0 V
VGS = 5 V
VGS = -4 V
VGS(TH)
Gate Threshold Voltage
RDS(on)
Drain-Source On Resistance
VSD Source-Drain Forward Voltage
All measurements were done with substrate connected to source.
VDS = VGS, ID = 7 mA
VGS = 5 V, ID = 20 A
IS = 0.5 A, VGS = 0 V
EPC2034 eGaN® FETs are supplied only in
passivated die form with solder bumps.
Die Size: 4.6 mm x 2.6 mm
• High Frequency DC-DC Conversion
• Motor Drive
• Industrial Automation
• Class-D Audio
MIN TYP MAX UNIT
200 V
0.1 0.4
mA
1 7 mA
0.1 0.4
mA
0.8 1.4
2.5
V
7 10 mΩ
1.8 V
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
|1

EPC2034
eGaN® FET DATASHEET
EPC2034
Dynamic Characteristics (TJ= 25˚C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN TYP
CISS Input Capacitance
CRSS Reverse Transfer Capacitance
VDS = 100 V, VGS = 0 V
COSS Output Capacitance
COSS(ER)
COSS(TR)
Effective Output Capacitance, Energy Related (Note 2)
Effective Output Capacitance, Time Related (Note 3)
VDS = 0 to 100 V, VGS = 0 V
RG Gate Resistance
QG Total Gate Charge
VDS = 100 V, VGS = 5 V, ID = 20 A
QGS Gate to Source Charge
QGD Gate to Drain Charge
VDS = 100 V, ID = 20 A
QG(TH)
Gate Charge at Threshold
QOSS
Output Charge
VDS = 100 V, VGS = 0 V
QRR Source-Drain Recovery Charge
Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.
Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
950
2.3
450
550
750
0.5
8.8
3
1.8
2.2
75
0
MAX UNIT
1140
680 pF
Ω
11
nC
113
Figure 1: Typical Output Characteristics at 25°C
200
VGS = 5 V
150
VGS = 4 V
VGS = 3 V
VGS = 2 V
100
50
Figure 2: Transfer Characteristics
200
150
25˚C
100 125˚C
VDS = 36 V
50
00 1 2 3 4 5
VDS – Drain-to-Source Voltage (V)
Figure 3: RDS(on) vs. VGS for Various Drain Currents
25
6
20 ID = 10 A
ID = 20 A
ID = 40 A
15 ID = 60 A
0 0.5 1.0
1.5 2.0 2.5 3.0 3.5 4.0
VGS – Gate-to-Source Voltage (V)
4.5
Figure 4: RDS(on) vs. VGS for Various Temperatures
5.0
25
25˚C
20 125˚C
VIDD=S =203 AV
15
10 10
55
02.5 3.0 3.5 4.0 4.5
VGS – Gate-to-Source Voltage (V)
5.0
0
2.5
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
3.0 3.5
4.0 4.5
VGS – Gate-to-Source Voltage (V)
5.0
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Features eGaN® FET DATASHEET EPC2034 – Enhanc ement Mode Power Transistor VDS , 200 V RDS(on) , 10 mΩ ID , 48 A D G S EP C2034 EFFICIENT POWER CONVERSION HAL G allium Nitride’s exceptionally high e lectron mobility and low temperature co efficient allows very low RDS(on), whil e its lateral device structure and majo rity carrier diode provide exceptionall y low QG and zero QRR. The end result i s a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maxim um Ratings PARAMETER VDS Drain-to-Sou rce Voltage (Continuous) ID Continuou s (TA = 25°C, RθJA = 3°C/W) Pulsed ( 25°C, TPULSE = 300 µs) VGS Gate-to- Source Voltage Gate-to-Source Voltage TJ Operating Temperature TSTG Storage T emperature VALUE 200 48 200 6 -4 –40 to 150 –40 to 150 UNIT V A V °C T hermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junctio n-to-Case 0.45 RθJB Thermal Resistance, Junction-to-Board 3.9 °C/W RθJA Ther.
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