EPC2032 Transistor Datasheet

EPC2032 Datasheet PDF, Equivalent


Part Number

EPC2032

Description

Enhancement Mode Power Transistor

Manufacture

EPC

Total Page 6 Pages
PDF Download
Download EPC2032 Datasheet PDF


EPC2032
eGaN® FET DATASHEET
EPC2032 – Enhancement Mode Power Transistor
VDS , 100 V
RDS(on) , 4 mΩ
ID , 48 A
D
G
S
EPC2032
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VALUE
VDS
Drain-to-Source Voltage (Continuous)
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)
ID
Continuous (TA = 25°C, RθJA = 7°C/W)
Pulsed (25°C, TPULSE = 300 µs)
VGS
Gate-to-Source Voltage
Gate-to-Source Voltage
100
120
48
340
6
-4
TJ Operating Temperature
TSTG Storage Temperature
-40 to 150
-40 to 150
UNIT
V
A
V
°C
EPC2032 eGaN® FETs are supplied only in
passivated die form with solder bumps.
Die Size: 4.6 mm x 2.6 mm
• High Speed DC-DC Conversion
• Motor Drive
• Industrial Automation
• Synchronous Rectification
• Class-D Audio
Thermal Characteristics
PARAMETER
TYP UNIT
RθJC Thermal Resistance, Junction-to-Case
0.45
RθJB Thermal Resistance, Junction-to-Board
3.9 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
45
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
PARAMETER
Static Characteristics (TJ = 25°C unless otherwise stated)
TEST CONDITIONS
BVDSS
IDSS
Drain-to-Source Voltage
Drain-Source Leakage
VGS = 0 V, ID = 0.8 mA
VGS = 0 V, VDS = 80 V
IGSS
VGS(TH)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Threshold Voltage
VGS = 5 V
VGS = -4 V
VDS = VGS, ID = 11 mA
RDS(on)
Drain-Source On Resistance
VGS = 5 V, ID = 30 A
VSD Source-Drain Forward Voltage
All measurements were done with substrate connected to source.
IS = 0.5 A, VGS = 0 V
MIN TYP
100
0.1
1
0.1
0.8 1.4
3
1.6
MAX
0.6
9
0.6
2.5
4
UNIT
V
mA
mA
mA
V
mΩ
V
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
|1

EPC2032
eGaN® FET DATASHEET
EPC2032
Dynamic Characteristics (TJ = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN TYP
CISS
CRSS
COSS
COSS(ER)
COSS(TR)
RG
QG
QGS
QGD
QG(TH)
QOSS
QRR
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Energy Related (Note 2)
Effective Output Capacitance, Time Related (Note 3)
Gate Resistance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge at Threshold
Output Charge
Source-Drain Recovery Charge
VDS = 50 V, VGS = 0 V
VDS = 0 to 50 V, VGS = 0 V
VDS = 50 V, VGS = 5 V, ID = 30 A
VDS = 50 V, ID = 30 A
VDS = 50 V, VGS = 0 V
1270
14
800
1060
1320
0.4
12
3.1
2
2.3
66
0
All measurements were done with substrate connected to source.
Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS.
Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
MAX
1530
1200
15
100
UNIT
pF
Ω
nC
Figure 1: Typical Output Characteristics at 25°C
Figure 2: Transfer Characteristics
300
250
200
150 VGS = 5 V
VGS = 4 V
100 VGS = 3 V
VGS = 2 V
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS – Drain-to-Source Voltage (V)
300
250
200 25˚C
125˚C
150 VDS = 3 V
100
50
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V)
Figure 3: RDS(on) vs. VGS for Various Drain Currents
12
10
ID = 15 A
ID = 30 A
ID = 60 A
8 ID = 120 A
Figure 4: RDS(on) vs. VGS for Various Temperatures
12
10 25˚C
125˚C
8 VIDD=S =303 AV
66
44
22
0 2.0 2.5 3.0 3.5 4.0 4.5
VGS – Gate-to-Source Voltage (V)
5.0
0
2.0
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
2.5 3.0 3.5 4.0 4.5
VGS – Gate-to-Source Voltage (V)
5.0
|2


Features eGaN® FET DATASHEET EPC2032 – Enhanc ement Mode Power Transistor VDS , 100 V RDS(on) , 4 mΩ ID , 48 A D G S EPC 2032 EFFICIENT POWER CONVERSION HAL Ga llium Nitride’s exceptionally high el ectron mobility and low temperature coe fficient allows very low RDS(on), while its lateral device structure and major ity carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where v ery high switching frequency, and low o n-time are beneficial as well as those where on-state losses dominate. Maximu m Ratings PARAMETER VALUE VDS Drain -to-Source Voltage (Continuous) Drain-t o-Source Voltage (up to 10,000 5 ms pul ses at 150°C) ID Continuous (TA = 25 °C, RθJA = 7°C/W) Pulsed (25°C, TPU LSE = 300 µs) VGS Gate-to-Source Vol tage Gate-to-Source Voltage 100 120 48 340 6 -4 TJ Operating Temperature TST G Storage Temperature -40 to 150 -40 t o 150 UNIT V A V °C EPC2032 eGaN® F ETs are supplied only in passivated die form with solder bumps. Die Size: 4.6.
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