SiJ438DP MOSFET Datasheet

SiJ438DP Datasheet PDF, Equivalent


Part Number

SiJ438DP

Description

N-Channel 40V (D-S) MOSFET

Manufacture

Vishay

Total Page 10 Pages
PDF Download
Download SiJ438DP Datasheet PDF


SiJ438DP
www.vishay.com
SiJ438DP
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
40
RDS(on) () Max.
0.00135 at VGS = 10 V
0.00175 at VGS = 4.5 V
ID (A) a, g
80
80
PowerPAK® SO-8L Single
Qg (Typ.)
58 nC
D
6.15 mm
1 5.13 mm
1
2S
3S
4S
G
Top View
Bottom View
Ordering Information:
SiJ438DP-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® Gen IV power MOSFET
• Tuned for the lowest RDS-Qoss FOM
• 100 % Rg and UIS tested
• Qgd / Qgs ratio < 1 optimizes switching
characteristics
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
• ORing
• High power density DC/DC
• VRMs and embedded DC/DC
G
• DC/AC inverters
• Load switch
N-Channel MOSFET
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VGS
ID
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
IAS
EAS
PD
TJ, Tstg
Limit
40
+20, -16
80 g
80 g
45.3 b, c
36.2 b, c
200
63
4.5 b, c
50
125
69.4
44.4
5 b, c
3.2 b, c
-55 to +150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
20
1.3
25
°C/W
1.8
Notes
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
g. Package limited.
S16-0750-Rev. A, 25-Apr-16
1
Document Number: 69684
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiJ438DP
www.vishay.com
SiJ438DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic b
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = +20 V, -16 V
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 10 A
VDS = 10 V, ID = 20 A
40 - - V
- 22 -
mV/°C
- -5.6 -
1.1 - 2.4 V
-
-
± 100
nA
- -1
μA
- - 10
30 - - A
- 0.00110 0.00135
- 0.00145 0.00175
- 149 -
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 20 V,VGS = 10 V, ID = 10 A
- 9400 -
- 1340 -
pF
- 215 -
- 121 182
- 58 87
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Qoss
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 20 V,VGS = 4.5 V, ID = 10 A
VDS = 20 V, VGS = 0 V
f = 1 MHz
VDD = 20 V, RL = 2
ID 10 A, VGEN = 10 V, Rg = 1
VDD = 20 V, RL = 2
ID 10 A, VGEN = 4.5 V, Rg = 1
- 22.6 -
nC
- 13.5 -
- 62.5 94
0.4 1.1 2.0
- 16 32
- 19 38
- 54 108
- 9 18
ns
- 55 110
- 98 196
- 47 94
- 17 34
Continuous Source-Drain Diode Current
IS
TC = 25 °C
-
Pulse Diode Forward Current (t = 100 μs)
ISM
-
Body Diode Voltage
VSD IS = 5 A -
Body Diode Reverse Recovery Time
trr
-
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
-
-
Reverse Recovery Rise Time
tb
-
- 63
A
- 200
0.7 1.1
V
60 120 ns
95 190 nC
33 -
ns
27 -
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-0750-Rev. A, 25-Apr-16
2
Document Number: 69684
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com SiJ438DP Vishay Siliconi x N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () Max . 0.00135 at VGS = 10 V 0.00175 at VGS = 4.5 V ID (A) a, g 80 80 PowerPAK® SO-8L Single Qg (Typ.) 58 nC D 6.15 mm 1 5.13 mm 1 2S 3S 4S G Top View Bottom View Ordering Information:  SiJ438DP-T1-GE3 (lead (Pb)-free and ha logen-free) FEATURES • TrenchFET® G en IV power MOSFET • Tuned for the lo west RDS-Qoss FOM • 100 % Rg and UIS tested • Qgd / Qgs ratio < 1 optimize s switching characteristics • Materia l categorization: for definitions of co mpliance please see www.vishay.com/doc? 99912 APPLICATIONS • Synchronous re ctification • ORing • High power density DC/DC • VRMs and embedded DC/ DC G • DC/AC inverters • Load swi tch N-Channel MOSFET D S ABSOLUTE MA XIMUM RATINGS (TA = 25 °C, unless othe rwise noted) Parameter Symbol Drain- Source Voltage VDS Gate-Source Voltag e Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) TC = 25 °C TC = .
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