SiRA52DP

www.vishay.com SiRA52DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () (MAX.) 0.0017 at VGS = 10 V 0.0023 at VGS = 4.5 V ID (A) a, g 60 60 Qg (TYP.) 47.5 nC PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information: SiRA52DP-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES TrenchFET® Gen IV power MOSFET Tuned for the lowest RDS-Qoss FOM 100 % Rg and UIS tested Qgd / Qgs ratio < 1 optimizes switching characteristics Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Synchronous rectification High power density DC/DC DC/AC inverters Battery and load switch D G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VGS ID IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS IAS EAS PD TJ, Tstg LIMIT 40 +20, -16 60 g 60 g 39.6 b, c 31.3 b, c 150 56.8 4.3 b, c 35 61 48 30.7 4.8 b, c 3 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE ...