SiSB46DN MOSFET Datasheet

SiSB46DN Datasheet PDF, Equivalent


Part Number

SiSB46DN

Description

Dual N-Channel 40V (D-S) MOSFET

Manufacture

Vishay

Total Page 13 Pages
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SiSB46DN
www.vishay.com
SiSB46DN
Vishay Siliconix
Dual N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
40
RDS(on) () MAX.
0.01171 at VGS = 10 V
0.01580 at VGS = 4.5 V
ID (A) f
34
29.4
Qg (TYP.)
6.8 nC
PowerPAK® 1212-8 Dual
D2
D2
6
D1
7
D1
8
5
3.3 mm
1
Top View
3.3 mm
1
4
G2
3
S2
2
G1
S1
Bottom View
Ordering Information:
SiSB46DN-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® Gen IV power MOSFET
• Tuned for the lowest RDS - Qoss FOM
• 100 % Rg and UIS tested
• Qgd / Qgs ratio < 1 optimizes switching characteristics
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
• DC/DC converters
• Motor drive switch
• Battery and load switch
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) c, d
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
40
+20 / -16
34
27.3
11.4 a, b
9.2 a, b
70
19
2.2 a, b
11
6
23
14.8
2.6 a, b
1.7 a, b
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient a, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady state
RthJA
RthJC
38
4.3
48
°C/W
5.4
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 94 °C/W.
f. Based on TC = 25 °C.
S16-1524-Rev. A, 08-Aug-16
1
Document Number: 76655
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SiSB46DN
www.vishay.com
SiSB46DN
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic b
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = +20 V / -16 V
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 5 A
VGS = 4.5 V, ID = 5 A
VDS = 10 V, ID = 5 A
40 -
-V
- 22.1 -
mV/°C
- -5.1 -
1.1 - 2.2 V
- - ± 100 nA
- -1
μA
- - 10
10 -
-A
- 0.00970 0.01171
- 0.01280 0.01580
- 52 - S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Crss/Ciss Ratio
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 5 A
- 1100 -
- 155 - pF
- 20 -
- 0.018 0.036
- 14.2 22
- 6.8 11
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Qoss
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 20 V, VGS = 4.5 V, ID = 5 A
VDS = 20 V, VGS = 0 V
f = 1 MHz
VDD = 20 V, RL = 4
ID 5 A, VGEN = 4.5 V, Rg = 1
VDD = 20 V, RL = 4
ID 5 A, VGEN = 10 V, Rg = 1
- 3 - nC
- 1.5 -
- 6.5 -
0.4 2
4
- 16 30
- 56 110
- 13 25
- 27 55
ns
- 7 15
- 22 45
- 13 25
- 8 15
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
IS
ISM
VSD
trr
Qrr
ta
tb
TC = 25 °C
- - 19
A
- - 70
IS = 5 A, VGS = 0 V
- 0.8 1.2 V
- 20 40 ns
- 10 20 nC
IF = 5 A, dI/dt = 100 A/μs, TJ = 25 °C - 10.5 -
ns
- 9.5 -
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1524-Rev. A, 08-Aug-16
2
Document Number: 76655
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Features www.vishay.com SiSB46DN Vishay Siliconi x Dual N-Channel 40 V (D-S) MOSFET PR ODUCT SUMMARY VDS (V) 40 RDS(on) ( ) MAX. 0.01171 at VGS = 10 V 0.01580 at VGS = 4.5 V ID (A) f 34 29.4 Qg (TYP .) 6.8 nC PowerPAK® 1212-8 Dual D2 D2 6 D1 7 D1 8 5 3.3 mm 1 Top View 3.3 mm 1 4 G2 3 S2 2 G1 S1 Bott om View Ordering Information: SiSB4 6DN-T1-GE3 (lead (Pb)-free and halogen- free) FEATURES • TrenchFET® Gen IV power MOSFET • Tuned for the lowest R DS - Qoss FOM • 100 % Rg and UIS test ed • Qgd / Qgs ratio < 1 optimizes sw itching characteristics • Material ca tegorization: for definitions of com pliance please see www.vishay.com/doc?9 9912 APPLICATIONS • Synchronous recti fication • DC/DC converters • Motor drive switch • Battery and load swit ch D1 D2 G1 G2 S1 N-Channel MOSFET S 2 N-Channel MOSFET ABSOLUTE MAXIMUM RA TINGS (TA = 25 °C, unless otherwise no ted) PARAMETER SYMBOL Drain-Source V oltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °.
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