DG309 Switches Datasheet

DG309 Datasheet PDF, Equivalent


Part Number

DG309

Description

Quad Monolithic SPST CMOS Analog Switches

Manufacture

Vishay

Total Page 11 Pages
PDF Download
Download DG309 Datasheet PDF


DG309
DG308A, DG309
Vishay Siliconix
Quad Monolithic SPST CMOS Analog Switches
DESCRIPTION
Featuring low on-resistance (60 ) and fast switching
(130 ns), the DG308A is supplied in the “normally open”
configuration while DG309 is supplied “normally closed”.
Input thresholds are high voltage CMOS compatible.
Designed with the Vishay Siliconix PLUS-40 CMOS process
to combine low power dissipation with a high breakdown
voltage rating of 44 V, each switch conducts equally well in
both directions when on, and blocks up to the supply voltage
when off. An epitaxial layer prevents latch up.
The DG308B, DG309B upgrades are recommended for new
designs.
FEATURES
• ± 15 V analog input range
• Low on-resistance: 60
• Fast switching: 130 ns
• Low power dissipation: 30 nW
CMOS logic compatible
BENEFITS
• Full rail-to-rail analog signal range
• Low signal error
• Wide dynamic range
• Single or dual supply capability
• Static protected logic inputs
• Space savings (TSSOP)
APPLICATIONS
• Portable and battery powered instrumentation
• Communication systems
• Computer peripherals
• High-speed multiplexing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
IN1
D1
S1
V–
GND
S4
D4
IN4
1
2
3
4
5
6
7
8
DG308A
16 IN2
15 D2
14 S2
13 V+
12 NC
11 S3
10 D3
9 IN3
Top View
For SPST Switches per Package
TRUTH TABLE
Logic
0
1
Logic “0” 3.5 V
Logic “1” 11 V
DG308A
OFF
ON
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70046
S11-0303-Rev. G, 28-Feb-11
DG309
ON
OFF
www.vishay.com
1

DG309
DG308A, DG309
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
0 °C to 70 °C
Package
16-Pin Plastic DIP
- 40 °C to 85 °C
16-Pin Narrow SOIC
16-Pin TSSOP
Part Number
DG308ACJ
DG308ACJ-E3
DG309CJ
DG309CJ-E3
DG308ADY
DG308ADY-E3
DG308ADY-T1
DG308ADY-T1-E3
DG309DY
DG309DY-E3
DG309DY-T1
DG309DY-T1-E3
DG308ADQ
DG308ADQ-E3
DG308ADQ-T1
DG308ADQ-T1-E3
DG309DQ
DG309DQ-E3
DG309DQ-T1
DG309DQ-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltages Referenced V+ to V-
GND
Digital Inputsa, VS, VD
Current, Any Terminal Except S or D
Continuous Current
S or D
(Pulsed at 1 ms, 10 % duty cycle max.)
Storage Temperature
Power Dissipationb
(AK Suffix)
(CJ, DY and DQ Suffix)
16-Pin Plastic DIPc
16-Pin Narrow SOIC and TSSOPe
16-Pin CerDIPd
Limit
44
25
(V-) - 2 to (V+) + 2 or
20 mA, whichever occurs first
30
20
70
- 65 to 150
- 65 to 125
470
600
900
Unit
V
mA
°C
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 12 mW/°C above 75 °C.
d. Derate 6.5 mW/°C above 25 °C.
e. Derate 7.6 mW/°C above 75 °C.
www.vishay.com
2
Document Number: 70046
S11-0303-Rev. G, 28-Feb-11


Features DG308A, DG309 Vishay Siliconix Quad Mono lithic SPST CMOS Analog Switches DESCR IPTION Featuring low on-resistance (60 ) and fast switching (130 ns), the D G308A is supplied in the “normally op en” configuration while DG309 is supp lied “normally closed”. Input thres holds are high voltage CMOS compatible. Designed with the Vishay Siliconix PLU S-40 CMOS process to combine low power dissipation with a high breakdown volta ge rating of 44 V, each switch conducts equally well in both directions when o n, and blocks up to the supply voltage when off. An epitaxial layer prevents l atch up. The DG308B, DG309B upgrades ar e recommended for new designs. FEATURE S • ± 15 V analog input range • Lo w on-resistance: 60  • Fast switch ing: 130 ns • Low power dissipation: 30 nW • CMOS logic compatible BENEFIT S • Full rail-to-rail analog signal r ange • Low signal error • Wide dyna mic range • Single or dual supply cap ability • Static protected logic inputs • Space savings (TSSOP) APPLICATIONS • Portable and ba.
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