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MMBFJ111 Dataheets PDF



Part Number MMBFJ111
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Switch
Datasheet MMBFJ111 DatasheetMMBFJ111 Datasheet (PDF)

N-Channel Switch J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 Features • This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers • Sourced from Process 51 • Source & Drain are Interchangeable • These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1, 2) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain−Gate Voltage Gate−Source Voltage Forward Gate Current Operating and Storage Junction.

  MMBFJ111   MMBFJ111



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N-Channel Switch J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 Features • This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers • Sourced from Process 51 • Source & Drain are Interchangeable • These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1, 2) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Drain−Gate Voltage Gate−Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 35 V −35 V 50 mA −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits. ON Semiconductor should be consulted on applications involving pulsed or low−duty−cycle operations. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Max Symbol PD Parameter MMBFJ111 / J111 / J112 / MMBFJ112 / J113 MMBFJ113 (Note 3) (Note 4) Unit Total Device Dissipation 625 350 mW Derate Above 25_C 5.0 2.8 mW/°C RqJC Thermal Resistance, 125 Junction−to−Case − °C/W RqJA Thermal Resistance, 200 Junction−to−Ambient 357 °C/W 3. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm2. DATA SHEET www.onsemi.com D SG TO−92 3 4.83x4.76 LEADFORMED CASE 135AR D SG TO−92 3 4.825x4.76 CASE 135AN G D S SOT−23 (TO−236) CASE 318−08 G D S SOT−23 CASE 318BM MARKING DIAGRAMS AX XXX YWW XXM 1 XXXX, XX A Y WW M = Specific Device Code = Assembly Plant Code = Year = Work Week = Date Code ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 1997 1 March, 2023 − Rev. 5 Publication Order Number: MMBFJ113/D J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Max Unit OFF CHARACTERISTICS V(BR)GSS IGSS VGS(off) Gate−Source Breakdown Voltage Gate Reverse Current Gate−Source Cut−Off Voltage IG = −1.0 mA, VDS = 0 VGS = −15 V, VDS = 0 VDS = 5 V, ID = 1.0 mA 111 112 −35 − V − −1.0 nA −3.0 −10.0 V −1.0 −5.0 113 −0.5 −3.0 ID(off) Drain Cutoff Leakage Current ON CHARACTERISTICS VDS = 5.0 V, VGS = −10 V − 1.0 nA IDSS Zero−Gate Voltage Drain Current (Note 5) VDS = 15 V, VGS = 0 111 112 20 − mA 5.0 − 113 2.0 − rDS(on) Drain−Source On Resistance VDS ≤ 0.1 V, VGS = 0 111 112 − 30 W − 50 113 − 100 SMALL SIGNAL CHARACTERISTICS Cdg(on) Csg(on) Drain−Gate &Source−Gate On Capacitance VDS = 0, VGS = 0, f = 1.0 MHz − 28 pF Cdg(off) Drain−Gate Off Capacitance VDS = 0, VGS = −10 V, f = 1.


NIS5820 MMBFJ111 MMBFJ112


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