Document
N-Channel Switch
J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113
Features
• This Device is Designed for Low Level Analog Switching, Sample
and Hold Circuits and Chopper Stabilized Amplifiers
• Sourced from Process 51 • Source & Drain are Interchangeable • These are Pb−Free Devices
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1, 2)
Symbol
Parameter
Value
Unit
VDG VGS IGF TJ, TSTG
Drain−Gate Voltage
Gate−Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
35
V
−35
V
50
mA
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits. ON Semiconductor should be consulted on
applications involving pulsed or low−duty−cycle operations.
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Max
Symbol PD
Parameter
MMBFJ111 /
J111 / J112 / MMBFJ112 /
J113
MMBFJ113
(Note 3)
(Note 4)
Unit
Total Device Dissipation
625
350
mW
Derate Above 25_C
5.0
2.8
mW/°C
RqJC Thermal Resistance,
125
Junction−to−Case
−
°C/W
RqJA Thermal Resistance,
200
Junction−to−Ambient
357
°C/W
3. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm2.
DATA SHEET www.onsemi.com
D SG
TO−92 3 4.83x4.76 LEADFORMED CASE 135AR
D SG TO−92 3 4.825x4.76 CASE 135AN
G
D S
SOT−23 (TO−236) CASE 318−08
G
D S
SOT−23 CASE 318BM
MARKING DIAGRAMS
AX XXX YWW
XXM 1
XXXX, XX A Y WW M
= Specific Device Code = Assembly Plant Code = Year = Work Week = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 1997
1
March, 2023 − Rev. 5
Publication Order Number: MMBFJ113/D
J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Max
Unit
OFF CHARACTERISTICS
V(BR)GSS IGSS
VGS(off)
Gate−Source Breakdown Voltage Gate Reverse Current Gate−Source Cut−Off Voltage
IG = −1.0 mA, VDS = 0 VGS = −15 V, VDS = 0 VDS = 5 V, ID = 1.0 mA 111
112
−35
−
V
−
−1.0
nA
−3.0
−10.0
V
−1.0
−5.0
113
−0.5
−3.0
ID(off) Drain Cutoff Leakage Current ON CHARACTERISTICS
VDS = 5.0 V, VGS = −10 V
−
1.0
nA
IDSS
Zero−Gate Voltage Drain Current (Note 5) VDS = 15 V, VGS = 0
111
112
20
−
mA
5.0
−
113
2.0
−
rDS(on) Drain−Source On Resistance
VDS ≤ 0.1 V, VGS = 0
111
112
−
30
W
−
50
113
−
100
SMALL SIGNAL CHARACTERISTICS
Cdg(on) Csg(on)
Drain−Gate &Source−Gate On Capacitance VDS = 0, VGS = 0, f = 1.0 MHz
−
28
pF
Cdg(off) Drain−Gate Off Capacitance
VDS = 0, VGS = −10 V, f = 1.