NDSH25170A Diode Datasheet

NDSH25170A Datasheet PDF, Equivalent


Part Number

NDSH25170A

Description

Silicon Carbide Schottky Diode

Manufacture

ON Semiconductor

Total Page 6 Pages
Datasheet
Download NDSH25170A Datasheet


NDSH25170A
Silicon Carbide Schottky
Diode
1700 V, 25 A
NDSH25170A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
Max Junction Temperature 175°C
Avalanche Rated 400 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
These Devices are Halogen Free/BFR Free and are RoHS Compliant
Applications
SMPS, Solar Inverter, UPS
Power Switching Circuits
www.onsemi.com
1. Cathode 2. Anode
Schottky Diode
1
2
TO2472LD
CASE 340DA
MARKING DIAGRAM
$Y&Z&3&K
NDSH
25170A
$Y
&Z
&3
&K
NDSH25170A
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
September, 2019 Rev. 1
1
Publication Order Number:
NDSH25170A/D

NDSH25170A
NDSH25170A
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
1700
V
EAS Single Pulse Avalanche Energy (Note 1)
400 mJ
IF Continuous Rectified Forward Current @ TC < 153°C
25 A
Continuous Rectified Forward Current @ TC < 135°C
35
IF, Max
Non-Repetitive Peak Forward Surge Current
TC = 25°C, 10 ms
1435
A
TC = 150°C, 10 ms
1428
A
IF,SM
Non-Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
220
A
IF,RM
Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
66
A
Ptot Power Dissipation
TC = 25°C
385 W
TC = 150°C
64 W
TJ, TSTG
Operating and Storage Temperature Range
55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 400 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 45 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max
Value
0.39
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min Typ Max Unit
VF Forward Voltage
IF = 25 A, TJ = 25°C
1.50 1.75 V
IF = 25 A, TJ = 125°C
1.95 2.35
IF = 25 A, TJ = 175°C
2.32 2.8
IR Reverse Current
VR = 1700 V, TJ = 25°C 0.08 40 mA
VR = 1700 V, TJ = 125°C
0.58 60
VR = 1700 V, TJ = 175°C
4.24 100
QC
Total Capacitive Charge
V = 800 V
169
nC
C Total Capacitance
VR = 1 V, f = 100 kHz
2025
pF
VR = 400 V, f = 100 kHz 155
VR = 800 V, f = 100 kHz 109
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
NDSH25170A
Top Marking
NDSH25170A
Package
TO2472LD
(Pb-Free / Halogen Free)
Shipping
30 Units / Tube
www.onsemi.com
2


Features Silicon Carbide Schottky Diode 1700 V, 2 5 A NDSH25170A Description Silicon Carb ide (SiC) Schottky Diodes use a complet ely new technology that provides superi or switching performance and higher rel iability compared to Silicon. No revers e recovery current, temperature indepen dent switching characteristics, and exc ellent thermal performance sets Silicon Carbide as the next generation of powe r semiconductor. System benefits includ e highest efficiency, faster operating frequency, increased power density, red uced EMI, and reduced system size and c ost. Features • Max Junction Temperat ure 175°C • Avalanche Rated 400 mJ High Surge Current Capacity • Posi tive Temperature Coefficient • Ease o f Paralleling • No Reverse Recovery / No Forward Recovery • These Devices are Halogen Free/BFR Free and are RoHS Compliant Applications • SMPS, Solar Inverter, UPS • Power Switching Circu its www.onsemi.com 1. Cathode 2. Anode Schottky Diode 1 2 TO−247−2LD CASE 340DA MARKING DIAGRAM $Y&Z&3&K NDSH 25170A $Y.
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