NGTB40N120L3WG IGBT Datasheet

NGTB40N120L3WG Datasheet PDF, Equivalent


Part Number

NGTB40N120L3WG

Description

IGBT

Manufacture

ON Semiconductor

Total Page 11 Pages
Datasheet
Download NGTB40N120L3WG Datasheet


NGTB40N120L3WG
NGTB40N120L3WG
IGBT - Ultra Field Stop
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for motor driver applications. Incorporated into the device is
a soft and fast co−packaged free wheeling diode with a low forward
voltage.
Features
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for Low VCEsat
These are Pb−Free Devices
Typical Applications
Solar Inverter and UPS
Industrial Switching
Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
160
40
V
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 160 A
IF A
160
40
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Transient gate−emitter voltage
(tpulse = 5 ms, D < 0.10)
IFM
VGE
160 A
±20 V
±30
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD W
454
227
Operating junction temperature range
Storage temperature range
Lead temperature for soldering, 1/8
from case for 5 seconds
TJ
Tstg
TSLD
−55 to +175
−55 to +175
260
°C
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
40 A, 1200 V
VCEsat = 1.55 V
Eoff = 1.5 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
40N120L3
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N120L3WG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2016
February, 2018 − Rev. 2
1
Publication Order Number:
NGTB40N120L3W/D

NGTB40N120L3WG
NGTB40N120L3WG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJC
RqJA
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VGE = VCE, IC = 400 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
VGE = 20 V, VCE = 0 V
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Value
0.33
0.61
40
Min Typ
1200
4.5
1.55
2.0
5.5
0.5
Max
1.8
6.5
0.4
200
Unit
°C/W
°C/W
°C/W
Unit
V
V
V
mA
nA
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 40 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 15 V
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
TJ = 175°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 15 V
Total switching loss
DIODE CHARACTERISTICS
Forward voltage
Reverse recovery time
VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A TJ = 175°C
Reverse recovery charge
Reverse recovery current
Diode peak rate of fall of reverse recovery
current during tb
TJ = 25°C
IF = 40 A, VR = 600 V
diF/dt = 500 A/ms
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
VF
trr
Qrr
Irrm
dIrrm/dt
− 4912 −
− 140 −
− 80 −
− 220 −
− 42 −
− 110 −
pF
nC
− 18 − ns
− 30 −
− 150 −
− 131 −
− 1.5 − mJ
− 1.5 −
− 3.0 −
− 18 − ns
− 31 −
− 156 −
− 220 −
− 2.0 − mJ
− 2.3 −
− 4.3 −
− 3.0 3.4 V
− 2.8 −
− 86 − ns
− 0.56 −
mc
− 12 − A
− −210 − A/ms
www.onsemi.com
2


Features NGTB40N120L3WG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effec tive Ultra Field Stop Trench constructi on, and provides superior performance i n demanding switching applications, off ering both low on−state voltage and m inimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling di ode with a low forward voltage. Feature s • Extremely Efficient Trench with F ield Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for Low VCEsat • These a re Pb−Free Devices Typical Applicatio ns • Solar Inverter and UPS • Indus trial Switching • Welding ABSOLUTE M AXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Colle ctor current @ TC = 25°C @ TC = 100°C VCES IC 1200 160 40 V A Pulsed col lector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C ICM 160 A IF A 160 40 Diode pulsed curre.
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