NGTB40N120IHRWG IGBT Datasheet

NGTB40N120IHRWG Datasheet PDF, Equivalent


Part Number

NGTB40N120IHRWG

Description

IGBT

Manufacture

ON Semiconductor

Total Page 10 Pages
Datasheet
Download NGTB40N120IHRWG Datasheet


NGTB40N120IHRWG
NGTB40N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low onstate voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features
Extremely Efficient Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Losses in IH Cooker Application
Reliable and Cost Effective Single Die Solution
This is a PbFree Device
Typical Applications
Inductive Heating
Consumer Appliances
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current, Tpulse
limited by TJmax, 10 ms pulse,
VGE = 15 V
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax, 10 ms pulse,
VGE = 0 V
Gateemitter voltage
Transient Gateemitter voltage
(Tpulse = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
Symbol
VCES
IC
ICM
Value
1200
80
40
120
Unit
V
A
A
IF A
80
40
IFM 120 A
VGE
$20
V
$25
PD W
384
192
TJ 40 to +175 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
55 to +175
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
40 A, 1200 V
VCEsat = 2.30 V
Eoff = 0.95 mJ
C
G
E
G
C
E
TO247
CASE 340AL
MARKING DIAGRAM
40N120IHR
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
Package
NGTB40N120IHRWG TO247
(PbFree)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2014
January, 2014 Rev. 1
1
Publication Order Number:
NGTB40N120IHR/D

NGTB40N120IHRWG
NGTB40N120IHRWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junctiontocase
Thermal resistance junctiontoambient
Symbol
RqJC
RqJA
Value
0.39
40
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
V
Collectoremitter saturation voltage
VGE
=V1G5EV=, I1C5=V4,0ICA=,
40 A
TJ = 175°C
VCEsat
2.30 2.55 V
2.70
Gateemitter threshold voltage
VGE = VCE, IC = 250 mA
VGE(th) 4.5 5.5 6.5
V
Collectoremitter cutoff current, gate
VGE = 0 V, VCE = 1200 V
ICES − − 0.2 mA
emitter shortcircuited
VGE = 0 V, VCE = 1200 V, TJ = 175°C
− − 2.8
Gate leakage current, collectoremitter
shortcircuited
VGE = 20 V, VCE = 0 V
IGES − − 100 nA
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 40 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Cies
Coes
Cres
Qg
Qge
Qgc
5320
124
100
225
36
98
pF
nC
Turnoff delay time
Fall time
Turnoff switching loss
Turnoff delay time
Fall time
Turnoff switching loss
DIODE CHARACTERISTIC
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V
TJ = 150°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
tf
Eoff
td(off)
tf
Eoff
230
120
0.95
245
180
2.10
ns
mJ
ns
mJ
Forward voltage
VGE
=V0GVE,
=IF0=V4,0IFA=,
40 A
TJ = 175°C
VF
2.10 2.60 V
3.30
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
http://onsemi.com
2


Features NGTB40N120IHRWG IGBT with Monolithic Fr ee Wheeling Diode This Insulated Gate B ipolar Transistor (IGBT) features a rob ust and cost effective Field Stop (FS) Trench construction, and provides super ior performance in demanding switching applications, offering both low on−st ate voltage and minimal switching loss. The IGBT is well suited for resonant o r soft switching applications. Features • Extremely Efficient Trench with Fi eldstop Technology • Low Switching Lo ss Reduces System Power Dissipation • Optimized for Low Losses in IH Cooker Application • Reliable and Cost Effec tive Single Die Solution • This is a Pb−Free Device Typical Applications Inductive Heating • Consumer Appli ances • Soft Switching ABSOLUTE MAXI MUM RATINGS Rating Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current , Tpulse limited by TJmax, 10 ms pulse, VGE = 15 V Diode forward current @ TC = 25°C @ TC = 100°C Diode pulsed current, Tpulse limited by TJmax, 10 ms pulse, VGE = 0.
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