NGTB25N120FL3WG IGBT Datasheet

NGTB25N120FL3WG Datasheet PDF, Equivalent


Part Number

NGTB25N120FL3WG

Description

IGBT

Manufacture

ON Semiconductor

Total Page 11 Pages
Datasheet
Download NGTB25N120FL3WG Datasheet


NGTB25N120FL3WG
NGTB25N120FL3WG
IGBT - Ultra Field Stop
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for UPS and solar applications. Incorporated into the device
is a soft and fast co−packaged free wheeling diode with a low forward
voltage.
Features
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
These are Pb−Free Devices
Typical Applications
Solar Inverter
Uninterruptible Power Inverter Supplies (UPS)
Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
50
25
V
A
Pulsed collector current, Tpulse limited
by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM
IF
100 A
A
50
25
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Transient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
100
$20
±30
349
174
A
V
W
Operating junction temperature range
Storage temperature range
Lead temperature for soldering, 1/8
from case for 5 seconds
TJ
Tstg
TSLD
−55 to +175
−55 to +175
260
°C
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
25 A, 1200 V
VCEsat = 1.7 V
Eoff = 0.7 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
25N120FL3
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB25N120FL3WG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2016
October, 2017 − Rev. 5
1
Publication Order Number:
NGTB25N120FL3W/D

NGTB25N120FL3WG
NGTB25N120FL3WG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V, IC = 25 A
VGE = 15 V, IC = 25 A, TJ = 175°C
VGE = VCE, IC = 400 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
VGE = 20 V , VCE = 0 V
Symbol
RqJC
RqJC
RqJA
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Value
0.43
0.78
40
Min Typ
1200
4.5
1.70
2.20
5.5
0.4
Max
1.95
6.5
0.1
2
200
Unit
°C/W
°C/W
°C/W
Unit
V
V
V
mA
nA
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 25 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
TJ = 25°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 15 V
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
TJ = 150°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 15 V
Total switching loss
DIODE CHARACTERISTICS
Forward voltage
Reverse recovery time
VGE = 0 V, IF = 25 A
VGE = 0 V, IF = 25 A TJ = 175°C
Reverse recovery charge
Reverse recovery current
Diode peak rate of fall of reverse recovery
current during tb
TJ = 25°C
IF = 25 A, VR = 600 V
diF/dt = 500 A/ms
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
VF
trr
Qrr
Irrm
dIrrm/dt
− 3085 −
− 94 −
− 52 −
− 136 −
− 29 −
− 67 −
pF
nC
− 15 −
− 21 −
− 109 −
− 131 −
− 1.0 −
− 0.7 −
− 1.7 −
− 15 −
− 21 −
− 113 −
− 169 −
− 1.45 −
− 0.95 −
− 2.4 −
ns
mJ
ns
mJ
− 3.0 3.4 V
− 2.8 −
− 90 − ns
− 0.62 −
mc
− 12 − A
− −256 − A/ms
www.onsemi.com
2


Features NGTB25N120FL3WG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effe ctive Ultra Field Stop Trench construct ion, and provides superior performance in demanding switching applications, of fering both low on−state voltage and minimal switching loss. The IGBT is wel l suited for UPS and solar applications . Incorporated into the device is a sof t and fast co−packaged free wheeling diode with a low forward voltage. Featu res • Extremely Efficient Trench with Field Stop Technology • TJmax = 175 C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • These are Pb−Free Devices Typica l Applications • Solar Inverter • U ninterruptible Power Inverter Supplies (UPS) • Welding ABSOLUTE MAXIMUM RAT INGS Rating Symbol Value Unit Coll ector−emitter voltage Collector curre nt @ TC = 25°C @ TC = 100°C VCES IC 1200 50 25 V A Pulsed collector curr ent, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C ICM IF 100 A.
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