NGTB30N135IHR1WG IGBT Datasheet

NGTB30N135IHR1WG Datasheet PDF, Equivalent


Part Number

NGTB30N135IHR1WG

Description

IGBT

Manufacture

ON Semiconductor

Total Page 9 Pages
Datasheet
Download NGTB30N135IHR1WG Datasheet


NGTB30N135IHR1WG
NGTB30N135IHR1WG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, provides superior
performance in demanding switching applications, and offers low
on−state voltage with minimal switching losses. The IGBT is well
suited for resonant or soft switching applications.
Features
Extremely Efficient Trench with Fieldstop Technology
1350 V Breakdown Voltage
Optimized for Low Losses in IH Cooker Application
Designed for High System Level Robustness
These are Pb−Free Devices
Typical Applications
Inductive Heating
Consumer Appliances
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage @
TJ = 25°C
VCES
1350
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC A
60
30
Pulsed collector current, Tpulse
limited by TJmax 10 ms pulse,
VGE = 15 V
ICM 120 A
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF A
60
30
Diode pulsed current, Tpulse limited
by TJmax 10 ms pulse, VGE = 0 V
Gate−emitter voltage
Transient Gate−emitter Voltage
(Tpulse = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
120
$20
±25
394
197
A
V
W
Operating junction temperature range
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
TJ
Tstg
TSLD
−40 to +175
−55 to +175
260
°C
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
30 A, 1350 V
VCEsat = 2.4 V
Eoff = 0.63 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
30N135IHR1
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package Shipping
NGTB30N135IHR1WG TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 0
1
Publication Order Number:
NGTB30N135IHR1/D

NGTB30N135IHR1WG
NGTB30N135IHR1WG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJA
Value
0.38
40
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 5 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 175°C
VGE = VCE, IC = 250 mA
VGE = 0 V, VCE = 1350 V
VGE = 0 V, VCE = 1350 V, TJ = 175°C
VGE = 20 V, VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 30 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
DIODE CHARACTERISTIC
TJ = 25°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
TJ = 150°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
Forward voltage
VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 175°C
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Cies
Coes
Cres
Qg
Qge
Qgc
td(off)
tf
Eoff
td(off)
tf
Eoff
VF
Min
1350
4.5
Typ
2.4
2.6
5.5
5530
124
100
220
47
100
200
124
0.63
222
221
1.50
1.7
2.1
Max
3.0
6.5
0.5
5.0
100
2.2
Unit
V
V
V
mA
nA
pF
nC
ns
mJ
ns
mJ
V
www.onsemi.com
2


Features NGTB30N135IHR1WG IGBT with Monolithic F ree Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a r obust and cost effective Field Stop (FS ) Trench construction, provides superio r performance in demanding switching ap plications, and offers low on−state v oltage with minimal switching losses. T he IGBT is well suited for resonant or soft switching applications. Features Extremely Efficient Trench with Fiel dstop Technology • 1350 V Breakdown V oltage • Optimized for Low Losses in IH Cooker Application • Designed for High System Level Robustness • These are Pb−Free Devices Typical Applicat ions • Inductive Heating • Consumer Appliances • Soft Switching ABSOLUT E MAXIMUM RATINGS Rating Symbol Valu e Unit Collector−emitter voltage @ TJ = 25°C VCES 1350 V Collector cu rrent @ TC = 25°C @ TC = 100°C IC A 60 30 Pulsed collector current, Tpulse limited by TJmax 10 ms pulse, VGE = 15 V ICM 120 A Diode forward current @ TC = 25°C @ TC = 100°C IF A 60 30 Diode pulsed .
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