NGTB40N120FL3WG IGBT Datasheet

NGTB40N120FL3WG Datasheet PDF, Equivalent


Part Number

NGTB40N120FL3WG

Description

IGBT

Manufacture

ON Semiconductor

Total Page 11 Pages
Datasheet
Download NGTB40N120FL3WG Datasheet


NGTB40N120FL3WG
NGTB40N120FL3WG
IGBT - Ultra Field Stop
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
both low onstate voltage and minimal switching loss. The IGBT is
well suited for UPS and solar applications. Incorporated into the device
is a soft and fast copackaged free wheeling diode with a low forward
voltage.
Features
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
These are PbFree Devices
Typical Applications
Solar Inverter
Uninterruptible Power Inverter Supplies (UPS)
Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectoremitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
80
40
V
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 160 A
IF A
80
40
Diode pulsed current, Tpulse limited
by TJmax
Gateemitter voltage
Transient gateemitter voltage
(Tpulse = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
IFM
VGE
PD
160 A
±20 V
±30
W
454
227
Operating junction temperature range
Storage temperature range
Lead temperature for soldering, 1/8
from case for 5 seconds
TJ
Tstg
TSLD
55 to +175
55 to +175
260
°C
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
40 A, 1200 V
VCEsat = 1.7 V
Eoff = 1.1 mJ
C
G
E
G
CE
TO247
CASE 340AL
MARKING DIAGRAM
40N120FL3
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
NGTB40N120FL3WG
Package Shipping
TO247 30 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2016
February, 2019 Rev. 4
1
Publication Order Number:
NGTB40N120FL3W/D

NGTB40N120FL3WG
NGTB40N120FL3WG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junctiontocase, for IGBT
Thermal resistance junctiontocase, for Diode
Thermal resistance junctiontoambient
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collectoremitter breakdown voltage,
gateemitter shortcircuited
VGE = 0 V, IC = 500 mA
Collectoremitter saturation voltage
Gateemitter threshold voltage
Collectoremitter cutoff current, gate
emitter shortcircuited
Gate leakage current, collectoremitter
shortcircuited
VGE
=V1G5EV=, I1C5=V4,0ICA=,
40 A
TJ = 175°C
VGE = VCE, IC = 400 mA
VGE
=V0GVE,=V0CEV,=V1C2E00=
1200 V
V, TJ = 175°C
VGE = 20 V , VCE = 0 V
Symbol
RqJC
RqJC
RqJA
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Value
0.33
0.61
40
Min Typ
1200
4.5
1.7
2.3
5.5
0.5
Max
1.95
6.5
0.4
200
Unit
°C/W
°C/W
°C/W
Unit
V
V
V
mA
nA
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 40 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
Turnoff switching loss
VCC
=
T6J00=
25°C
V, IC =
40
A
Rg = 10 W
VGE = 15V
Total switching loss
Turnon delay time
Rise time
Turnoff delay time
Fall time
Turnon switching loss
Turnoff switching loss
TJ = 175°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 15 V
Total switching loss
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A, TJ = 175°C
Reverse recovery charge
Reverse recovery current
Diode peak rate of fall of reverse recovery
current during tb
TJ = 25°C
IF = 40 A, VR = 600 V
diF/dt = 500 A/ms
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
VF
trr
Qrr
Irrm
dIrrm/dt
4912
140
80
212
43
102
pF
nC
18 ns
31
145
107
1.6 mJ
1.1
2.7
20 ns
31
153
173
2.2 mJ
1.7
3.9
3.0 3.4 V
2.8
86 ns
0.56
mc
12 A
− −210 A/ms
www.onsemi.com
2


Features NGTB40N120FL3WG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transisto r (IGBT) features a robust and cost eff ective Ultra Field Stop Trench construc tion, and provides superior performance in demanding switching applications, o ffering both low on−state voltage and minimal switching loss. The IGBT is we ll suited for UPS and solar application s. Incorporated into the device is a so ft and fast co−packaged free wheeling diode with a low forward voltage. Fea tures • Extremely Efficient Trench wi th Field Stop Technology • TJmax = 17 5°C • Soft Fast Reverse Recovery Dio de • Optimized for High Speed Switchi ng • These are Pb−Free Devices Typ ical Applications • Solar Inverter Uninterruptible Power Inverter Suppli es (UPS) • Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit C ollector−emitter voltage Collector cu rrent @ TC = 25°C @ TC = 100°C VCES IC 1200 80 40 V A Pulsed collector c urrent, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C ICM 160 A .
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