NGTB40N120SWG IGBT Datasheet

NGTB40N120SWG Datasheet PDF, Equivalent


Part Number

NGTB40N120SWG

Description

IGBT

Manufacture

ON Semiconductor

Total Page 5 Pages
Datasheet
Download NGTB40N120SWG Datasheet


NGTB40N120SWG
NGTB40N120SWG
IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
Features
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
10 ms Short Circuit Capability
These are Pb−Free Devices
Typical Applications
Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
80
40
V
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 200 A
IF A
80
40
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Transient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
IFM
VGE
200
$20
±30
A
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD W
535
267
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ 150°C
Operating junction temperature
range
TSC
TJ
10
−55 to +175
ms
°C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +175
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
40 A, 1200 V
VCEsat = 2.0 V
Eoff = 1.10 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
40N120S
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N120SWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 0
1
Publication Order Number:
NGTB40N120SW/D

NGTB40N120SWG
NGTB40N120SWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJC
RqJA
Value
0.28
0.5
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VGE = VCE, IC = 400 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
VGE = 20 V , VCE = 0 V
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Min
1200
4.5
Typ
2.00
2.40
5.5
Max
2.40
6.5
0.1
2
200
Unit
V
V
V
mA
nA
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 40 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Cies
Coes
Cres
Qg
Qge
Qgc
− 7385 −
− 230 −
− 140 −
− 313 −
− 61 −
− 151 −
pF
nC
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V
TJ = 175°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
− 116 −
ns
− 42 −
− 286 −
− 121 −
− 3.4 − mJ
− 1.1 −
− 4.5 −
− 111 −
ns
− 43 −
− 304 −
− 260 −
− 4.4 − mJ
− 2.5 −
− 6.9 −
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 40 A
VF − 2.00 2.60 V
VGE = 0 V, IF = 50 A, TJ = 175°C
− 2.30 −
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TJ = 25°C
IF = 40 A, VR = 400 V
diF/dt = 200 A/ms
trr
− 240 −
ns
Qrr − 2.5 − mc
Irrm − 18 − A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
http://onsemi.com
2


Features NGTB40N120SWG IGBT - Inverter Welding T his Insulated Gate Bipolar Transistor ( IGBT) features a robust and cost effect ive Trench construction, and provides s uperior performance in demanding switch ing applications, offering both low on state voltage and minimal switching los s. The IGBT is well suited for welding applications. Incorporated into the dev ice is a soft and fast co−packaged fr ee wheeling diode with a low forward vo ltage. Features • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Op timized for High Speed Switching • 10 ms Short Circuit Capability • These are Pb−Free Devices Typical Applicati ons • Welding ABSOLUTE MAXIMUM RATIN GS Rating Symbol Value Unit Collec tor−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES IC 1 200 80 40 V A Pulsed collector curren t, Tpulse limited by TJmax Diode forwar d current @ TC = 25°C @ TC = 100°C I CM 200 A IF A 80 40 Diode pulsed curre nt, Tpulse limited by TJmax Gate−emitter voltage Transient gate−emitter voltage (Tpuls.
Keywords NGTB40N120SWG, datasheet, pdf, ON Semiconductor, IGBT, GTB40N120SWG, TB40N120SWG, B40N120SWG, NGTB40N120SW, NGTB40N120S, NGTB40N120, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)