NGTB03N60R2DT4G

NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V]  IGBT tf=75ns (typ) Diode VF=1.5V (typ) [IF=3A] Diode trr=65ns (typ) 5s Short Circuit Capability Applications  General Purpose Inverter Specifications Absolute Maximum Ratings at Ta=25C, Unless otherwise specified Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (DC) Limited by Tjmax @Tc=25C *2 @Tc=100C *2 Collector Current (Peak) Pulse width Llimited by Tjmax Diode Average Output Current Power Dissipation Tc=25C (Our ideal heat dissipation condition) *2 Junction Temperature Storage Temperature Symbol VCES VGES IC *1 ICP IO PD Tj Tstg Value 600 20 9 4.5 12 4.5 49 175 55 to +175 Unit V V A A A A W C C Note :  *1 Collector Current is calculated from the following formula. Tjmax - Tc IC(Tc)= Rth(j-c)×VCE(sat) (IC(Tc)) *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. www.onsemi.com Electrical Connection N-Channel 2,4 1 1:Gate 2:Collector 3:Emitter 3 4:Collector 4 12 3 DPAK CASE 369C Marking Diagram 1 Gate 2 Collector AYWW GTB 0360RG 3 Emitter 4 Collector GTB0360R = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits ...