NGTB03N60R2DT4G IGBT Datasheet

NGTB03N60R2DT4G Datasheet PDF, Equivalent


Part Number

NGTB03N60R2DT4G

Description

IGBT

Manufacture

ON Semiconductor

Total Page 8 Pages
Datasheet
Download NGTB03N60R2DT4G Datasheet


NGTB03N60R2DT4G
NGTB03N60R2DT4G
IGBT
600V, 4.5A, N-Channel
Features
Reverse Conducting II IGBT
IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V]
IGBT tf=75ns (typ)
Diode VF=1.5V (typ) [IF=3A]
Diode trr=65ns (typ)
5s Short Circuit Capability
Applications
General Purpose Inverter
Specifications
Absolute Maximum Ratings at Ta=25C, Unless otherwise specified
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current (DC)
Limited by Tjmax
@Tc=25C *2
@Tc=100C *2
Collector Current (Peak)
Pulse width Llimited by Tjmax
Diode Average Output Current
Power Dissipation
Tc=25C (Our ideal heat dissipation condition) *2
Junction Temperature
Storage Temperature
Symbol
VCES
VGES
IC *1
ICP
IO
PD
Tj
Tstg
Value
600
20
9
4.5
12
4.5
49
175
55 to +175
Unit
V
V
A
A
A
A
W
C
C
Note :
*1 Collector Current is calculated from the following formula.
Tjmax - Tc
IC(Tc)= Rth(j-c)×VCE(sat) (IC(Tc))
*2 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching
the device to water-cooled radiator made of aluminum.
www.onsemi.com
Electrical Connection
N-Channel
2,4
1
1:Gate
2:Collector
3:Emitter
3 4:Collector
4
12
3
DPAK
CASE 369C
Marking Diagram
1
Gate
2
Collector
AYWW
GTB
0360RG
3
Emitter
4
Collector
GTB0360R = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
September 2015 - Rev. 3
1
Publication Order Number :
NGTB03N60R2DT4G/D

NGTB03N60R2DT4G
NGTB03N60R2DT4G
Electrical Characteristics at Ta=25C, Unless otherwise specified
Parameter
Collector to Emitter Breakdown Voltage
Collector to Emitter Cut off Current
Gate to Emitter Leakage Current
Gate to Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
Forward Diode Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-ON Time
Turn-OFF Delay Time
Fall Time
Turn-OFF Time
Turn-ON Energy
Turn-OFF Energy
Total Gate Charge
Gate to Emitter Charge
Gate to Collector “Miller” Charge
Diode Reverse Recovery Time
Symbol
V(BR)CES
ICES
IGES
VGE(th)
VCE(sat)
VF
Cies
Coes
Cres
td(on)
tr
ton
td(off)
tf
toff
Eon
Eoff
Qg
Qge
Qgc
trr
Conditions
IC=1mA, VGE=0V
VCE=600V, VGE=0V
VGE=20V, VCE=0V
VCE=20V, IC=80A
VGE=15V, IC=3A
IF=3A
Tc=25C
Tc=150C
Tc=25C
Tc=100C
VCE=20V, f=1MHz
VCC=300V, IC=3A
RG=30, L=500H
VGE=0V/15V
Vclamp=400V
Tc=25C
See Fig.1, See Fig.2
VCE=300V, VGE=15V, IC=3A
IF=3A,di/dt=200A/s, VCC=300V, See Fig.3
min
600
Value
typ
4.5
1.7
1.9
1.5
415
17
10
27
17
85
59
75
172
50
27
17
4.4
7.6
65
max
10
1
100
7.0
2.1
2.3
2.1
Unit
V
A
mA
nA
V
V
V
V
pF
pF
pF
ns
ns
ns
ns
ns
ns
J
J
nC
nC
nC
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Thermal Characteristics at Ta=25C, Unless otherwise specified
Parameter
Symbol
Conditions
Thermal Resistance IGBT (Junction to Case)
Thermal Resistance (Junction to Ambient)
Rth(j-c) (IGBT)
Rth(j-a)
Tc=25C
(Our ideal heat dissipation condition) *2
Note : *2 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching
the device to water-cooled radiator made of aluminum.
Value
Unit
3.06
100
C/W
C/W
www.onsemi.com
2


Features NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Chann el Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.7V (typ) [IC=3 A, VGE=15V]  IGBT tf=75ns (typ)  Diode VF=1.5V (typ) [IF=3A] Dio de trr=65ns (typ) 5s Short Cir cuit Capability Applications  Gener al Purpose Inverter Specifications Abs olute Maximum Ratings at Ta=25C, Unl ess otherwise specified Parameter Col lector to Emitter Voltage Gate to Emit ter Voltage Collector Current (DC) Limi ted by Tjmax @Tc=25C *2 @Tc=100C *2 Collector Current (Peak) Pulse wi dth Llimited by Tjmax Diode Average Ou tput Current Power Dissipation Tc=25 C (Our ideal heat dissipation conditio n) *2 Junction Temperature Storage Te mperature Symbol VCES VGES IC *1 ICP I O PD Tj Tstg Value 600 20 9 4.5 12 4.5 49 175 55 to +175 Unit V V A A A A W C C Note :  *1 Collect or Current is calculated from the follo wing formula. Tjmax - Tc IC(Tc)= Rth (j-c)×VCE(sat) (IC(Tc)) *2 Our condition is radiation from backside. The method is applying silicone grea.
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