ESDM3551 Diode Datasheet

ESDM3551 Datasheet PDF, Equivalent


Part Number

ESDM3551

Description

5.5V ESD Protection Diode

Manufacture

ON Semiconductor

Total Page 9 Pages
Datasheet
Download ESDM3551 Datasheet


ESDM3551
5.5V ESD Protection Diode
MicroPackaged Diodes for ESD Protection
ESDM3551
The ESDM3551 is designed to protect voltage sensitive components
that require low capacitance from ESD and transient voltage events.
Excellent clamping capability, low capacitance, low leakage, and fast
response time, make these parts ideal for ESD protection on designs
where board space is at a premium.
www.onsemi.com
Features
Low Clamping Voltage
Small Body Outline Dimensions:
0201: 0.62 mm x 0.32 mm
0402: 1.00 mm x 0.60 mm
Low Body Height: 0.3 mm
Standoff Voltage: 5.5 V
IEC6100042 Level 4 ESD Protection
SZESDM3551MX2WT5G* Wettable Flanks Device for optimal
Automated Optical Inspection (AOI) (*Product Release in Q4 2019)
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
USB ID Line Protection
mSD Card Protection
Audio Line Protection
GPIO
12
MARKING
DIAGRAMS
PIN 1
X3DFN2 (0201)
CASE 152AF
5 = Specific Device Code
M = Date Code
M
X2DFN2 (0402)
CASE 714AB
JJ M
JJ = Specific Device Code
M = Date Code
X2DFNW2
CASE 711BG
XXM
MAXIMUM RATINGS
XX = Specific Device Code
M = Date Code
Rating
Symbol
Value
Unit
IEC 6100042 Contact
IEC 6100042 Air
ISO 10605 150 pF/2 kW
ISO 10605 330 pF/2 kW
ISO 10605 330 pF/330 W
Total Power Dissipation on FR5 Board
(Note 1) @ TA = 25°C
Thermal Resistance, JunctiontoAmbient
Junction and Storage Temperature Range
Lead Solder Temperature Maximum
(10 Second Duration)
ESD
°PD°
RqJA
TJ, Tstg
TL
±30 kV
±30
±30
±30
±30
250 mW
400
55 to +150
260
°C/W
°C
°C
ORDERING INFORMATION
Device
ESDM3551MXT5G
Package Shipping
X3DFN2 10000 /
(PbFree) Tape & Reel
ESDM3551N2T5G
X2DFN2 8000 / Tape
(PbFree) & Reel
SZESDM3551N2T5G
X2DFN2 8000 / Tape
(PbFree) & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
SZESDM3551MX2WT5G X2DFNW2 8000 / Tape
device. If any of these limits are exceeded, device functionality should not be
(PbFree) & Reel
assumed, damage may occur and reliability may be affected.
1. FR5 = 1.0 x 0.75 x 0.62 in.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
See Application Note AND8308/D for further description of survivability speBcrso.chure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
November, 2019 Rev. 4
1
Publication Order Number:
ESDM3551/D

ESDM3551
ESDM3551
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
IPP
VC VBR VRWM IIRT IIRT VRWM VBR VC V
IPP
BiDirectional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse Working Voltage
VRWM
5.5 V
Breakdown Voltage (Note 2)
VBR IT = 1 mA
5.6 7.0 V
Reverse Leakage Current
IR VRWM = 5.5 V
0.1 mA
Clamping Voltage (Note 3)
VC IPP = 1 A
6.0 V
Clamping Voltage (Note 3)
VC IPP = 8 A
8.2 V
Peak Pulse Current (Note 3)
IPP tP = 8/20 ms
9.9 A
Clamping Voltage
TLP (Note 4)
VC IPP = 16 A IEC 6100042 Level 4 equivalent
(±8 kV Contact, ±15 kV Air)
7.5
V
Junction Capacitance
Dynamic Resistance
Insertion Loss
CJ
RDYN
VR = 0 V, f = 1 MHz
TLP Pulse
f = 10 MHz
21 pF
0.11 W
0.01 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
3. Nonrepetitive current pulse at TA = 25°C, per IEC6100045 waveform.
4. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
10
5
0
5
20 0 20 40 60 80 100 120 140
TIME (ns)
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC6100042
5
0
5
10
15
20
25
30
35
40
20 0 20 40 60 80 100 120 140
TIME (ns)
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC6100042
www.onsemi.com
2


Features 5.5V ESD Protection Diode Micro−Packag ed Diodes for ESD Protection ESDM3551 The ESDM3551 is designed to protect vo ltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping cap ability, low capacitance, low leakage, and fast response time, make these part s ideal for ESD protection on designs w here board space is at a premium. www. onsemi.com Features • Low Clamping V oltage • Small Body Outline Dimension s: − 0201: 0.62 mm x 0.32 mm − 0402 : 1.00 mm x 0.60 mm • Low Body Height : 0.3 mm • Stand−off Voltage: 5.5 V • IEC61000−4−2 Level 4 ESD Prote ction • SZESDM3551MX2WT5G* − Wettab le Flanks Device for optimal Automated Optical Inspection (AOI) (*Product Rele ase in Q4 2019) • SZ Prefix for Autom otive and Other Applications Requiring Unique Site and Control Change Requirem ents; AEC−Q101 Qualified and PPAP Cap able • These Devices are Pb−Free, H alogen Free/BFR Free and are RoHS Compliant Typical Applications • USB ID Line Protection • mSD C.
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