CSD19536KCS MOSFET Datasheet

CSD19536KCS Datasheet PDF, Equivalent


Part Number

CSD19536KCS

Description

100V N-Channel Power MOSFET

Manufacture

etcTI

Total Page 12 Pages
Datasheet
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CSD19536KCS
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CSD19536KCS
SLPS485B – JANUARY 2014 – REVISED OCTOBER 2014
CSD19536KCS 100 V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• TO-220 Plastic Package
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg Gate Charge Total (10 V)
Qgd Gate Charge Gate to Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
118
17
VGS = 6 V
VGS = 10 V
2.5
2.5
2.3
UNIT
V
nC
nC
m
m
V
2 Applications
• Secondary Side Synchronous Rectifier
• Motor Control
Device
CSD19536KCS
Ordering Information
Package
Media Qty
TO-220 Plastic
Package
Tube
50
Ship
Tube
3 Description
This 100 V, 2.3 mΩ, TO-220 NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
SPACE
Drain (Pin 2)
Gate
(Pin 1)
Source (Pin 3)
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
100
±20
150
UNIT
V
V
Continuous Drain Current (Silicon limited),
ID TC = 25°C
259
Continuous Drain Current (Silicon limited),
TC = 100°C
IDM Pulsed Drain Current (1)
183
400
PD Power Dissipation
375
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 175
EAS
Avalanche Energy, single pulse
ID = 127 A, L = 0.1 mH, RG = 25
806
A
A
W
°C
mJ
(1) Max RθJC = 0.4°C/W, pulse duration 100 μs, duty cycle 1%
.
.
.
RDS(on) vs VGS
10
9
TC = 25°C,I D = 100A
TC = 125°C,I D = 100A
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
9
ID = 100A
VDS = 50V
8
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100 110 120
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD19536KCS
CSD19536KCS
SLPS485B – JANUARY 2014 – REVISED OCTOBER 2014
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics .............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 KCS Package Dimensions........................................ 9
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (April 2014) to Revision B
Page
• Updated Pulsed Drain Current conditions ............................................................................................................................. 1
• Updated the SOA in Figure 10 ............................................................................................................................................... 6
Changes from Original (January 2014) to Revision A
Page
• Increased pulsed current rating to 400 A .............................................................................................................................. 1
• Updated SOA curve................................................................................................................................................................ 6
2 Submit Documentation Feedback
Product Folder Links: CSD19536KCS
Copyright © 2014, Texas Instruments Incorporated


Features Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19536KCS SLPS485B – JAN UARY 2014 – REVISED OCTOBER 2014 CSD1 9536KCS 100 V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg a nd Qgd • Low Thermal Resistance • A valanche Rated • Pb-Free Terminal Pla ting • RoHS Compliant • Halogen Fre e • TO-220 Plastic Package Product S ummary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drai n-to-Source On-Resistance VGS(th) Thres hold Voltage TYPICAL VALUE 100 118 17 VGS = 6 V VGS = 10 V 2.5 2.5 2.3 UNIT V nC nC mΩ mΩ V 2 Application s • Secondary Side Synchronous Rectif ier • Motor Control Device CSD19536K CS Ordering Information Package Medi a Qty TO-220 Plastic Package Tube 50 Ship Tube 3 Description This 100 V, 2.3 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Absolute Maximum.
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