CSD19536KTT MOSFET Datasheet

CSD19536KTT Datasheet PDF, Equivalent


Part Number

CSD19536KTT

Description

100V N-Channel Power MOSFET

Manufacture

etcTI

Total Page 15 Pages
Datasheet
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CSD19536KTT
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CSD19536KTT
SLPS540B – MARCH 2015 – REVISED AUGUST 2016
CSD19536KTT 100-V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Lead-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• D2PAK Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Hot Swap
• Motor Control
3 Description
This 100-V, 2-mΩ, D2PAK (TO-263) NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
SPACE
Pin Out
Drain (Pin 2)
Gate
(Pin 1)
Source (Pin 3)
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg Gate Charge Total (10 V)
Qgd Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
118
17
VGS = 6 V
VGS = 10 V
2.5
2.2
2
UNIT
V
nC
nC
m
V
DEVICE
CSD19536KTT
CSD19536KTTT
Device Information(1)
QTY MEDIA
PACKAGE
500 13-Inch
50 Reel
D2PAK Plastic
Package
SHIP
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current
(Package Limited)
VALUE
100
±20
200
UNIT
V
V
ID
Continuous Drain Current (Silicon Limited),
TC = 25°C
272
Continuous Drain Current (Silicon Limited),
TC = 100°C
IDM Pulsed Drain Current(1)
192
400
PD Power Dissipation
375
TJ, Operating Junction,
Tstg Storage Temperature
–55 to 175
EAS
Avalanche Energy, Single Pulse
ID = 127 A, L = 0.1 mH, RG = 25
806
A
A
W
°C
mJ
(1) Max RθJC = 0.4°C/W, Pulse duration 100 µs, Duty cycle
1%.
.
RDS(on) vs VGS
8
TC = 25°C, I D = 100 A
7 TC = 125°C, I D = 100 A
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
10
9
ID = 100 A
VDS = 50 V
8
7
6
5
4
3
2
1
0
0 12 24
Gate Charge
36 48 60 72 84
Qg - Gate Charge (nC)
96 108 120
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD19536KTT
CSD19536KTT
SLPS540B – MARCH 2015 – REVISED AUGUST 2016
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Receiving Notification of Documentation Updates.... 7
6.2 Community Resources.............................................. 7
6.3 Trademarks ............................................................... 7
6.4 Electrostatic Discharge Caution ................................ 7
6.5 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 KTT Package Dimensions ........................................ 8
7.2 Recommended PCB Pattern..................................... 9
7.3 Recommended Stencil Opening ............................. 10
4 Revision History
Changes from Revision A (May 2015) to Revision B
Page
• Added Receiving Notification of Documentation Updates section ......................................................................................... 7
• Updated package drawing ...................................................................................................................................................... 8
• Updated PCB drawing ............................................................................................................................................................ 9
• Updated stencil drawing ....................................................................................................................................................... 10
Changes from Original (March 2015) to Revision A
Page
• Added Community Resources section ................................................................................................................................... 7
• Added PCB and stencil drawings in Mechanical, Packaging, and Orderable Information .................................................... 8
2 Submit Documentation Feedback
Copyright © 2015–2016, Texas Instruments Incorporated
Product Folder Links: CSD19536KTT


Features Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19536KTT SLPS540B – MAR CH 2015 – REVISED AUGUST 2016 CSD1953 6KTT 100-V N-Channel NexFET™ Power MO SFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Aval anche Rated • Lead-Free Terminal Plat ing • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applicatio ns • Secondary Side Synchronous Recti fier • Hot Swap • Motor Control 3 D escription This 100-V, 2-mΩ, D2PAK (TO -263) NexFET™ power MOSFET is designe d to minimize losses in power conversio n applications. SPACE Pin Out Drain (Pi n 2) Gate (Pin 1) Source (Pin 3) Pro duct Summary TA = 25°C VDS Drain-to-S ource Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on ) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 100 118 17 VGS = 6 V VGS = 10 V 2.5 2.2 2 UNIT V nC nC mΩ V DEVICE CSD1953 6KTT CSD19536KTTT Device Information(1) QTY MEDIA PACKAGE 500 13-Inch 50 Reel D2PAK Plasti.
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