CSD19536KTT

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19536KTT SLPS540B – MARCH 2015 – REVISED AUGUST 2016 CSD19536KTT 100-V N-Channel NexFET™ Power MOSFET 1 Features 1 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Lead-Free Terminal Plating RoHS Compliant Halogen Free D2PAK Plastic Package 2 Applications Secondary Side Synchronous Rectifier Hot Swap Motor Control 3 Description This 100-V, 2-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE Pin Out Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 100 118 17 VGS = 6 V VGS = 10 V 2.5 2.2 2 UNIT V nC nC mΩ V DEVICE CSD19536KTT CSD19536KTTT Device Information(1) QTY MEDIA PACKAGE 500 13-Inch 50 Reel D2PAK Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 100 ±20 200 UNIT V V ID Continuous Drain Current (Silicon Limited), TC = 25°C 272 Continuous Drain Current (Silicon Limited), TC = 100°C IDM Pulsed Drain Current(1) 192 400 PD Power Dissipation 375 TJ, Operating Junction, Tstg St...