CSD19532Q5B MOSFET Datasheet

CSD19532Q5B Datasheet PDF, Equivalent


Part Number

CSD19532Q5B

Description

100V N-Channel Power MOSFET

Manufacture

etcTI

Total Page 13 Pages
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CSD19532Q5B
SLPS414B – DECEMBER 2013 – REVISED MAY 2017
CSD19532Q5B 100 V N-Channel NexFET™ Power MOSFET
1 Features
1 Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg Gate Charge Total (10 V)
Qgd Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
48
8.7
VGS = 6 V
VGS = 10 V
2.6
4.6
4
UNIT
V
nC
nC
m
m
V
2 Applications
• Synchronous Rectifier for Offline and Isolated DC-
DC Converters
• Motor Control
3 Description
This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
S1
8D
S2
7D
S3
G4
D
6D
5D
P0093-01
Device
CSD19532Q5B
CSD19532Q5BT
.
Ordering Information(1)
Media
Qty Package
13-Inch Reel 2500 SON 5 x 6 mm
13-Inch Reel 250 Plastic Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
100
±20
100
UNIT
V
V
ID
Continuous Drain Current (Silicon limited),
TC = 25°C
Continuous Drain Current(1)
140
17
IDM Pulsed Drain Current(2)
Power Dissipation(1)
PD Power Dissipation, TC = 25°C
400
3.1
195
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 150
EAS
Avalanche Energy, single pulse
ID = 74 A, L = 0.1 mH, RG = 25
274
A
A
W
°C
mJ
(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-
inch thick FR4 PCB.
(2) Max RθJC = 0.8°C/W, Pulse duration 100 µs, duty cycle 1%
RDS(on) vs VGS
20
18
TC = 25°C,I D = 17A
TC = 125°C,I D = 17A
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
1
Gate Charge
10
9
ID = 17A
VDS = 50V
8
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45 50
Qg - Gate Charge (nC)
G001
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD19532Q5B
CSD19532Q5B
SLPS414B – DECEMBER 2013 – REVISED MAY 2017
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Receiving Notification of Documentation Updates.... 7
6.2 Community Resources.............................................. 7
6.3 Trademarks ............................................................... 7
6.4 Electrostatic Discharge Caution ................................ 7
6.5 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Q5B Package Dimensions ........................................ 8
7.2 Recommended PCB Pattern..................................... 9
7.3 Recommended Stencil Pattern ................................. 9
7.4 Q5B Tape and Reel Information ............................. 10
4 Revision History
Changes from Revision A (June 2014) to Revision B
Page
• Added the Receiving Notification of Documentation Updates and Community Resources sections to Device and
Documentation Support. ........................................................................................................................................................ 7
• Changed the dimension between pads 3 and 4 from 0.028 inches: to 0.050 inches in the Recommended PCB
Pattern section diagram ......................................................................................................................................................... 9
Changes from Original (December 2013) to Revision A
Page
• Added small reel option to ordering information table. .......................................................................................................... 1
• Increased silicon limit for continuous drain current to 140 A. ................................................................................................ 1
• Increased max pulsed current to 400 A. ............................................................................................................................... 1
• Added max power rating when the case temperature is held to 25°C. ................................................................................. 1
• Updated pulsed current conditions to specify Max RθJC. ....................................................................................................... 1
• Updated Figure 10. ................................................................................................................................................................ 6
• Updated mechanical drawing. ............................................................................................................................................... 8
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Features Product Folder Order Now Technical Doc uments Tools & Software Support & Com munity CSD19532Q5B SLPS414B – DECEMB ER 2013 – REVISED MAY 2017 CSD19532Q5 B 100 V N-Channel NexFET™ Power MOSFE T 1 Features •1 Low Qg and Qgd • L ow Thermal Resistance • Avalanche Rat ed • Pb-Free Terminal Plating • RoH S Compliant • Halogen Free • SON 5- mm × 6-mm Plastic Package Product Sum mary TA = 25°C VDS Drain-to-Source Vo ltage Qg Gate Charge Total (10 V) Qgd G ate Charge Gate to Drain RDS(on) Drain- to-Source On Resistance VGS(th) Thresho ld Voltage TYPICAL VALUE 100 48 8.7 VGS = 6 V VGS = 10 V 2.6 4.6 4 UNIT V nC nC mΩ mΩ V 2 Applications Synchronous Rectifier for Offline and Isolated DCDC Converters • Motor Con trol 3 Description This 100 V, 4 mΩ, S ON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Device CSD19532Q5B CSD19532Q5BT . Ordering Information(1) Media Qty Package 13-Inch Reel 2500.
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