CSD19532KTT

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19532KTT SLPS553 – OCTOBER 2015 CSD19532KTT 100 V N-Channel NexFET™ Power MOSFET 1 Features 1 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating RoHS Compliant Halogen Free D2PAK Plastic Package 2 Applications Secondary Side Synchronous Rectifier Hot Swap Motor Control 3 Description This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE Pin Out Drain (Pin 2) Gate (Pin 1) Source (Pin 3) . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 100 44 5.6 VGS = 6 V VGS = 10 V 2.6 5.3 4.6 UNIT V nC nC mΩ mΩ V DEVICE CSD19532KTT CSD19532KTTT Ordering Information(1) QTY MEDIA PACKAGE 500 50 13-Inch Reel D2PAK Plastic Package SHIP Tape & Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 100 ±20 200 UNIT V V Continuous Drain Current (Silicon limited), ID TC = 25°C 136 Continuous Drain Current (Silicon limited), TC = 100°C IDM Pulsed Drain Current (1) 98 400 PD Power Dissipation 250 TJ, Operating Junction and Tstg Storage Tempera...