CSD19532KTT MOSFET Datasheet

CSD19532KTT Datasheet PDF, Equivalent


Part Number

CSD19532KTT

Description

100V N-Channel Power MOSFET

Manufacture

etcTI

Total Page 12 Pages
Datasheet
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CSD19532KTT
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CSD19532KTT
SLPS553 – OCTOBER 2015
CSD19532KTT 100 V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• D2PAK Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Hot Swap
• Motor Control
3 Description
This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
SPACE
Pin Out
Drain (Pin 2)
Gate
(Pin 1)
Source (Pin 3)
.
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg Gate Charge Total (10 V)
Qgd Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
44
5.6
VGS = 6 V
VGS = 10 V
2.6
5.3
4.6
UNIT
V
nC
nC
m
m
V
DEVICE
CSD19532KTT
CSD19532KTTT
Ordering Information(1)
QTY MEDIA
PACKAGE
500
50
13-Inch
Reel
D2PAK Plastic Package
SHIP
Tape &
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
100
±20
200
UNIT
V
V
Continuous Drain Current (Silicon limited),
ID TC = 25°C
136
Continuous Drain Current (Silicon limited),
TC = 100°C
IDM Pulsed Drain Current (1)
98
400
PD Power Dissipation
250
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 175
EAS
Avalanche Energy, single pulse
ID = 72 A, L = 0.1 mH, RG = 25
259
A
A
W
°C
mJ
(1) Max RθJC = 0.6°C/W, Pulse duration 100 µs,
Duty cycle 1%
Text added for spacing
RDS(on) vs VGS
14
TC = 25°C, I D = 90 A
12 TC = 125°C, I D = 90 A
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
Gate Charge
10
9
ID = 90 A
VDS = 50 V
8
7
6
5
4
3
2
1
0
0 6 12 18 24 30 36 42 48
Qg - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD19532KTT
CSD19532KTT
SLPS553 – OCTOBER 2015
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Community Resources.............................................. 7
6.2 Trademarks ............................................................... 7
6.3 Electrostatic Discharge Caution ................................ 7
6.4 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 KTT Package Dimensions ........................................ 8
7.2 Recommended PCB Pattern..................................... 9
7.3 Recommended Stencil Opening (0.125 mm Stencil
Thickness).................................................................. 9
4 Revision History
DATE
October 2015
REVISION
*
NOTES
Initial release.
2 Submit Documentation Feedback
Product Folder Links: CSD19532KTT
Copyright © 2015, Texas Instruments Incorporated


Features Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19532KTT SLPS553 – OCTO BER 2015 CSD19532KTT 100 V N-Channel Ne xFET™ Power MOSFET 1 Features •1 U ltra-Low Qg and Qgd • Low Thermal Res istance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant Halogen Free • D2PAK Plastic Packag e 2 Applications • Secondary Side Syn chronous Rectifier • Hot Swap • Mot or Control 3 Description This 100 V, 4. 6 mΩ, D2PAK (TO-263) NexFET™ power M OSFET is designed to minimize losses in power conversion applications. SPACE P in Out Drain (Pin 2) Gate (Pin 1) Sourc e (Pin 3) . Product Summary TA = 25° C VDS Drain-to-Source Voltage Qg Gate C harge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Re sistance VGS(th) Threshold Voltage TYP ICAL VALUE 100 44 5.6 VGS = 6 V VGS = 10 V 2.6 5.3 4.6 UNIT V nC nC mΩ mΩ V DEVICE CSD19532KTT CSD19532KTT T Ordering Information(1) QTY MEDIA PACKAGE 500 50 13-Inch Reel D2PAK Plastic Package SH.
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