CSD19534Q5A

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19534Q5A SLPS483 – MAY 2014 CSD19534Q5A 100 V N-Channel NexFET™ Power MOSFETs 1 Features 1 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating RoHS Compliant Halogen Free SON 5 mm × 6 mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 100 17 3.2 VGS = 6 V VGS = 10 V 2.8 14.1 12.6 UNIT V nC nC mΩ mΩ V 2 Applications Primary Side Telecom Motor Control 3 Description This 100 V, 12.6 mΩ, SON 5 mm x 6mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 6D G4 D 5D P0093-01 . . Device CSD19534Q5A CSD19534Q5AT . Ordering Information(1) Media Qty Package 13-Inch Reel 2500 SON 5 x 6 mm 7-Inch Reel 250 Plastic Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 100 ±20 50 UNIT V V ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current(1) 44 10 IDM Pulsed Drain Current(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C 137 3.2 63 TJ, Operating Junction and Tstg S...