CSD19534Q5A MOSFET Datasheet

CSD19534Q5A Datasheet PDF, Equivalent


Part Number

CSD19534Q5A

Description

100V N-Channel Power MOSFET

Manufacture

etcTI

Total Page 14 Pages
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CSD19534Q5A
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CSD19534Q5A
SLPS483 – MAY 2014
CSD19534Q5A 100 V N-Channel NexFET™ Power MOSFETs
1 Features
1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5 mm × 6 mm Plastic Package
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg Gate Charge Total (10 V)
Qgd Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
17
3.2
VGS = 6 V
VGS = 10 V
2.8
14.1
12.6
UNIT
V
nC
nC
m
m
V
2 Applications
• Primary Side Telecom
• Motor Control
3 Description
This 100 V, 12.6 mΩ, SON 5 mm x 6mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
S1
8D
S2
7D
S3
6D
G4
D
5D
P0093-01
.
.
Device
CSD19534Q5A
CSD19534Q5AT
.
Ordering Information(1)
Media
Qty Package
13-Inch Reel 2500 SON 5 x 6 mm
7-Inch Reel 250 Plastic Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
100
±20
50
UNIT
V
V
ID
Continuous Drain Current (Silicon limited),
TC = 25°C
Continuous Drain Current(1)
44
10
IDM Pulsed Drain Current(2)
Power Dissipation(1)
PD Power Dissipation, TC = 25°C
137
3.2
63
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 150
EAS
Avalanche Energy, single pulse
ID = 33 A, L = 0.1 mH, RG = 25
55
A
A
W
°C
mJ
(1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-
inch thick FR4 PCB.
(2) Max RθJC = 2.0°C/W, pulse duration 100 μs, duty cycle 1%
RDS(on) vs VGS
40
36
TC = 25°C,I D = 10A
TC = 125°C,I D = 10A
32
28
24
20
16
12
8
4
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
Gate Charge
10
9
ID = 10A
VDS = 50V
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18
Qg - Gate Charge (nC)
G001
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD19534Q5A
CSD19534Q5A
SLPS483 – MAY 2014
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics.......................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Trademarks ............................................................... 7
6.2 Electrostatic Discharge Caution ................................ 7
6.3 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Q5A Package Dimensions ........................................ 9
7.2 Recommended PCB Pattern................................... 10
7.3 Recommended Stencil Opening ............................. 11
7.4 Q5A Tape and Reel Information ............................. 11
4 Revision History
DATE
May 2014
REVISION
*
NOTES
Initial release.
2 Submit Documentation Feedback
Product Folder Links: CSD19534Q5A
Copyright © 2014, Texas Instruments Incorporated


Features Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19534Q5A SLPS483 – MAY 2014 CSD19534Q5A 100 V N-Channel NexFET ™ Power MOSFETs 1 Features •1 Ultr a-Low Qg and Qgd • Low Thermal Resist ance • Avalanche Rated • Pb-Free Te rminal Plating • RoHS Compliant • H alogen Free • SON 5 mm × 6 mm Plasti c Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Cha rge Total (10 V) Qgd Gate Charge Gate t o Drain RDS(on) Drain-to-Source On Resi stance VGS(th) Threshold Voltage TYPIC AL VALUE 100 17 3.2 VGS = 6 V VGS = 10 V 2.8 14.1 12.6 UNIT V nC nC mΩ mΩ V 2 Applications • Primary Sid e Telecom • Motor Control 3 Descripti on This 100 V, 12.6 mΩ, SON 5 mm x 6mm NexFET™ power MOSFET is designed to minimize losses in power conversion app lications. Top View S1 8D S2 7D S3 6D G4 D 5D P0093-01 . . Device CSD19534Q5A CSD19534Q5AT . Ordering I nformation(1) Media Qty Package 13-Inch Reel 2500 SON 5 x 6 mm 7-Inch Reel 250 Plastic Pack.
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