CSD19535KCS

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19535KCS SLPS484B – JANUARY 2014 – REVISED OCTOBER 2014 CSD19535KCS 100 V N-Channel NexFET™ Power MOSFET 1 Features 1 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package 2 Applications Secondary Side Synchronous Rectifier Motor Control 3 Description This 100 V, 3.1 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE Drain (Pin 2) Gate (Pin 1) . Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 100 78 13 VGS = 6 V VGS = 10 V 2.7 3.4 3.1 UNIT V nC nC mΩ mΩ V Device CSD19535KCS Ordering Information(1) Package Media TO-220 Plastic Package Tube Qty 50 Ship Tube (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 100 ±20 150 UNIT V V Continuous Drain Current (Silicon limited), ID TC = 25°C 187 Continuous Drain Current (Silicon limited), TC = 100°C IDM Pulsed Drain Current (1) 133 400 PD Power Dissipation 300 TJ, Operating Junction and Tstg Storage Temperature Range –55 to 175 EAS ...