CSD19535KTT MOSFET Datasheet

CSD19535KTT Datasheet PDF, Equivalent


Part Number

CSD19535KTT

Description

100V N-Channel Power MOSFET

Manufacture

etcTI

Total Page 12 Pages
Datasheet
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CSD19535KTT
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CSD19535KTT
SLPS539B – MARCH 2015 – REVISED JANUARY 2017
CSD19535KTT 100-V N-Channel NexFET™ Power MOSFET
1 Features
1 Ultra-Low Qg and Qgd
• Low-Thermal Resistance
• Avalanche Rated
• Lead-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• D2PAK Plastic Package
2 Applications
• Hot Swap
• Motor Control
• Secondary Side Synchronous Rectifier
3 Description
This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
.
Pin Out
Drain (Pin 2)
Gate
(Pin 1)
Source (Pin 3)
.
Product Summary
TA = 25°C
VDS Drain-to-Source Voltage
Qg Gate Charge Total (10 V)
Qgd Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
75
11
VGS = 6 V
VGS = 10 V
2.7
3.2
2.8
UNIT
V
nC
nC
m
V
DEVICE
CSD19535KTT
CSD19535KTTT
Device Information(1)
QTY MEDIA
PACKAGE
500
13-Inch Reel
50
D2PAK Plastic
Package
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package Limited)
VALUE
100
±20
200
UNIT
V
V
Continuous Drain Current (Silicon Limited),
ID TC = 25°C
Continuous Drain Current (Silicon Limited),
TC = 100°C
IDM Pulsed Drain Current(1)
PD Power Dissipation, TC = 25°C
TJ, Operating Junction,
Tstg Storage Temperature
EAS
Avalanche Energy, Single Pulse
ID = 95 A, L = 0.1 mH
197
139
400
300
–55 to 175
A
A
W
°C
451 mJ
(1) Max RθJC = 0.5°C/W, pulse duration 100 µs, duty cycle
1%.
.
RDS(on) vs VGS
10
9
TC = 25°C, I D = 100 A
TC = 125°C, I D = 100 A
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
1
Gate Charge
10
9
ID = 100 A
VDS = 50 V
8
7
6
5
4
3
2
1
0
0 8 16 24 32 40 48 56 64 72 80
Qg - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD19535KTT
CSD19535KTT
SLPS539B – MARCH 2015 – REVISED JANUARY 2017
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Receiving Notification of Documentation Updates.... 7
6.2 Community Resources.............................................. 7
6.3 Trademarks ............................................................... 7
6.4 Electrostatic Discharge Caution ................................ 7
6.5 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 KTT Package Dimensions ........................................ 8
7.2 Recommended PCB Pattern..................................... 9
7.3 Recommended Stencil Opening (0.125 mm Stencil
Thickness).................................................................. 9
4 Revision History
Changes from Revision A (May 2015) to Revision B
Page
• Added Receiving Notification of Documentation Updates section to Device and Documentation Support section............... 7
• Changed the drawing in KTT Package Dimensions section .................................................................................................. 8
• Changed the drawing in Recommended PCB Pattern section............................................................................................... 9
• Changed the drawing in Recommended Stencil Opening (0.125 mm Stencil Thickness) section ........................................ 9
Changes from Original (March 2015) to Revision A
Page
• Added Community Resources ............................................................................................................................................... 7
2 Submit Documentation Feedback
Copyright © 2015–2017, Texas Instruments Incorporated
Product Folder Links: CSD19535KTT


Features Product Folder Order Now Technical Doc uments Tools & Software Support & Com munity CSD19535KTT SLPS539B – MARCH 2015 – REVISED JANUARY 2017 CSD19535K TT 100-V N-Channel NexFET™ Power MOSF ET 1 Features •1 Ultra-Low Qg and Qg d • Low-Thermal Resistance • Avalan che Rated • Lead-Free Terminal Platin g • RoHS Compliant • Halogen Free D2PAK Plastic Package 2 Applications • Hot Swap • Motor Control • Sec ondary Side Synchronous Rectifier 3 Des cription This 100-V, 2.8 mΩ, D2PAK (TO -263) NexFET™ power MOSFET is designe d to minimize losses in power conversio n applications. . Pin Out Drain (Pin 2) Gate (Pin 1) Source (Pin 3) . Product Summary TA = 25°C VDS Drain-to-Sourc e Voltage Qg Gate Charge Total (10 V) Q gd Gate Charge Gate-to-Drain RDS(on) Dr ain-to-Source On Resistance VGS(th) Thr eshold Voltage TYPICAL VALUE 100 75 11 VGS = 6 V VGS = 10 V 2.7 3.2 2.8 UNIT V nC nC mΩ V DEVICE CSD19535KT T CSD19535KTTT Device Information(1) QTY MEDIA PACKAGE 500 13-Inch Reel 50 D2PAK Plastic P.
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