2N2905A

2N2905A General Purpose Transistor High Speed Switching Features: PNP Silicon Planar Switching Transistor. Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. Switching And Linear Application DC to VHF Amplifier Applications. TO-39 Metal Can Package Dimensions A B C D E F G H J K L Minimum 8.50 7.74 6.09 0.40 2.41 4.82 0.71 0.73 12.70 42° Maximum 9.39 8.50 6.60 0.53 0.88 2.66 5.33 0.86 1.02 48° Dimensions : Millimetres Pin Configuration 1. Emitter 2. Base 3. Collector Page 1 31/05/05 V1.0 2N2905A General Purpose Transistor Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD Tj, Tstg Value 60 5.0 600 600 3.43 3.0 17.2 -65 to +200 Unit V mA mW mW/°C W mW/°C °C Electrical Characteristics (Ta = 25°C unless otherwise specified) Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO* VCBO VEBO Test Condition IC = 10mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 Value Minimum Maximum 60 - 5.0 - Collector-Cut off Current ICBO VCB = 50V, IE = 0 10 TA = 150°C VCB = 50V, IE = 0 - 10 ICEX VCE = 30V, VBE = 0.5V 50 Base Current IB Collector Emitter Saturation Voltage VCE(sat)* Base Emitter Saturation Voltage VBE(sat)* DC ...