MG1250S-BA1MM Module Datasheet

MG1250S-BA1MM Datasheet PDF, Equivalent


Part Number

MG1250S-BA1MM

Description

IGBT Module

Manufacture

Littelfuse

Total Page 6 Pages
Datasheet
Download MG1250S-BA1MM Datasheet


MG1250S-BA1MM
Power Module
1200V 50A IGBT Module
MG1250S-BA1MM
Features
• Ultra Low Loss
• High Ruggedness
• High Short Circuit
Capability
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E71639
Applications
• Inverter
• Converter
• Welder
RoHS ®
• Positive Temperature
Coefficient
• With Fast Free-Wheeling
Diodes
• SMPS and UPS
• Induction Heating
Module Characteristics (TC = 25°C, unless otherwise specified)
Symbol
RthJC
RthJCD
Torque
Torque
Weight
Parameters
Junction-to-Case Thermal
Resistance
Module-to-Sink
Module Electrodes
Test Conditions
Per IGBT
Per Inverse Diode
Recommended (M6)
Recommended (M5)
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
IGBT
VCES
VGES
IC
ICpuls
Ptot
TJ
TSTG
Visol
Diode
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Pulsed Collector Current
Power Dissipation Per IGBT
Junction Temperature Range
Storage Temperature Range
Insulation Test Voltage
TC=25°C
TC=80°C
TC=25°C, tp=1ms
TC=80°C, tp=1ms
AC, t=1min
VRRM
IF(AV)
Repetitive Reverse Voltage
Average Forward Current
TC=25°C
TC=80°C
IF(RMS)
RMS Forward Current
IFSM
Non-Repetitive Surge Forward
Current
TJ =45°C, t=10ms, Sine
TJ =45°C, t=8.3ms, Sine
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
MG1250S-BA1MM
413
Min Typ Max
0.3
0.6
35
2.5 5
150
Unit
K/W
K/W
N·m
N·m
g
Values
1200
±20
80
50
170
110
500
-40 to +150
-40 to +125
3000
1200
90
60
90
430
450
Unit
V
V
A
A
A
W
°C
°C
V
V
A
A
A
A
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15

MG1250S-BA1MM
Power Module
1200V 50A IGBT Module
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)
Symbol
IGBT
VGE(th)
VCE(sat)
Parameters
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
ICES Collector Leakage Current
IGES Gate Leakage Current
Qge Gate Charge
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
td(on) Turn - on Delay Time
tr Rise Time
td(off) Turn - off Delay Time
tf Fall Time
Eon Turn - on Energy
Eoff
Diode
VF
trr
IRRM
Qrr
Turn - off Energy
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
Test Conditions
VCE=VGE, IC=2mA
IC=50A, VGE=15V, TJ=25°C
IC=50A, VGE=15V, TJ=125°C
VCE=1200V, VGE=0V, TJ=25°C
VCE=1200V, VGE=0V, TJ=125°C
VCE=0V,VGE=±20V
VCC=600V, IC=50A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
VCC=600V
IC=50A
RG =18Ω
VGE=±15V
Inductive Load
TJ =25°C
TJ =125°C
TJ =25°C
TJ =125°C
TJ =25°C
TJ =125°C
TJ =25°C
TJ =125°C
TJ =25°C
TJ =125°C
TJ =25°C
TJ =125°C
IF=50A , VGE=0V, TJ =25°C
IF=50A , VGE=0V, TJ =125°C
IF=50A , VR=800V
diF/dt=-1000A/μs
TJ =125°C
Min Typ Max
5.0 6.2
1.8
2.0
2
-200
611
4.29
0.30
0.20
270
290
60
60
480
550
60
65
6.0
8.4
3.7
5.8
1.9
1.7
180
60
7.1
7.0
0.5
200
2.3
2.1
Unit
V
V
V
mA
mA
nA
nC
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
V
V
nS
A
μC
MG1250S-BA1MM
424
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:05/19/15


Features Power Module 1200V 50A IGBT Module MG125 0S-BA1MM Features • Ultra Low Loss High Ruggedness • High Short Circ uit Capability Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Applicatio ns • Inverter • Converter • Welde r RoHS ® • Positive Temperature Co efficient • With Fast Free-Wheeling Diodes • SMPS and UPS • Induction H eating Module Characteristics (TC = 25 °C, unless otherwise specified) Symbo l RthJC RthJCD Torque Torque Weight Pa rameters Junction-to-Case Thermal Resis tance Module-to-Sink Module Electrodes Test Conditions Per IGBT Per Inverse D iode Recommended (M6) Recommended (M5) Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Pa rameters Test Conditions IGBT VCES V GES IC ICpuls Ptot TJ TSTG Visol Diode Collector - Emitter Voltage Gate - Emi tter Voltage DC Collector Current Pulse d Collector Current Power Dissipation P er IGBT Junction Temperature Range Stor age Temperature Range Insulation Test Voltage TC=25°C TC=80°C TC=25°C, tp=1ms TC=80°C.
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