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MG1275W-XBN2MM Dataheets PDF



Part Number MG1275W-XBN2MM
Manufacturers Littelfuse
Logo Littelfuse
Description IGBT
Datasheet MG1275W-XBN2MM DatasheetMG1275W-XBN2MM Datasheet (PDF)

Power Module 1200V 75A IGBT Module MG1275W-XBN2MM RoHS Features • High level of integration—only one power semiconductor module required for the whole drive • Low saturation voltage and positive temperature coefficient • Fast switching and short tail current • Free wheeling diodes with fast and soft reverse recovery • Industry standard package with insulated copper base plate and soldering pins for PCB mounting • Temperature sense included Applications • AC motor control • Motion/ser.

  MG1275W-XBN2MM   MG1275W-XBN2MM


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Power Module 1200V 75A IGBT Module MG1275W-XBN2MM RoHS Features • High level of integration—only one power semiconductor module required for the whole drive • Low saturation voltage and positive temperature coefficient • Fast switching and short tail current • Free wheeling diodes with fast and soft reverse recovery • Industry standard package with insulated copper base plate and soldering pins for PCB mounting • Temperature sense included Applications • AC motor control • Motion/servo control • Inverter and power supplies Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol TJ max) TJ op Tstg Visol CTI Md Weight Parameters Max. Junction Temperature Operating Temperature Storage Temperature Insulation Test Voltage Comparative Tracking Index Mounting Torque Test Conditions AC, t=1min Recommended (M5) Min Typ Max 150 -40 125 -40 125 3000 250 2.5 5 300 Unit °C °C °C V N·m g Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol IGBT VCES VGES IC ICM Ptot Diode VRRM IF(AV) IFRM I2t Parameters Collector - Emitter Voltage Gate - Emitter Voltage DC Collector Current Repetitive Peak Collector Current Power Dissipation Per IGBT Repetitive Reverse Voltage Average Forward Current Repetitive Peak Forward Current Test Conditions TJ=25°C TC=25°C TC=80°C tp=1ms TJ=25°C TC=25°C TC=80°C tp=1ms TJ =125°C, t=10ms, VR=0V MG1275W-XBN2MM 2156 Values 1200 ±20 105 75 150 348 1200 105 75 150 1150 Unit V V A A A W V A A A A2s ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 75A IGBT Module Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max IGBT VGE(th) VCE(sat) IICES IGES RGint Qge Gate - Emitter Threshold Voltage Collector - Emitter Saturation Voltage Collector Leakage Current Gate Leakage Current Integrated Gate Resistor Gate Charge VCE=VGE, IC=3.0mA IC=75A, VGE=15V, TJ=25°C IC=75A, VGE=15V, TJ=125°C VCE=1200V, VGE=0V, TJ=25°C VCE=1200V, VGE=0V, TJ=125°C VCE=0V, VGE=±15V, TJ=125°C VCE=600V, IC=75A , VGE=±15V 5.0 5.8 1.7 1.9 -400 10 0.7 6.5 1 10 400 Cies Input Capacitance Cres Reverse Transfer Capacitance VCE=25V, VGE=0V, f =1MHz 5.3 0.2 td(on) tr td(off) tf Eon Eoff ISC RthJC Diode Turn - on Delay Time TJ=25°C TJ=125°C Rise Time Turn - off Delay Time Fall Time Turn - on Energy VCC=600V IC=75A RG =4.7Ω VGE=±15V Inductive Load TJ=25°C TJ=125°C TJ=25°C TJ=125°C TJ=25°C TJ=125°C TJ=25°C TJ=125°C Turn - off Energy TJ=25°C TJ=125°C Short Circuit Current tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V Junction-to-Case Thermal Resistance (Per IGBT) 260 290 30 50 420 520 70 90 6.6 9.4 6.8 8.0 300 0.36 VF tRR IRRM Erec RthJCD Forward Voltage Reverse Recovery Time Max. Reverse Recovery Current Reverse Recovery Energy IF=75A, VGE=0V, TJ =25°C IF=75A, VGE=0V, TJ =125°C IF=75A, VR=600V diF/dt=2000A/µs TJ=125°C Junction-to-Case Thermal Resistance (Per Diode) 1.65 1.65 300 85 6.5 0.6 Unit V V V mA mA nA Ω μC nF nF ns ns ns ns ns ns ns ns mJ mJ mJ mJ A K/W V V ns A mJ K/W MG1275W-XBN2MM 2257 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 75A IGBT Module Diode-Rectifier Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol VRRM IF(AV) IFRM I2t Parameters Repetitive Reverse Voltage Average Forward Current Non-Repetitive Surge Forward Current Test Conditions TJ=25°C TC=80°C TJ=45°C, t=10ms, 50Hz TJ=45°C, t=8.3ms, 60Hz TJ=45°C, t=10ms, 50Hz TJ=45°C, t=8.3ms, 60Hz Values 1600 75 450 400 1012 800 Diode-Rectifier Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified) Symbol VF IR RthJCD Parameters Forward Voltage Reverse Leakage Current Junction-to-Case Thermal Resistance (Per Diode) Test Conditions IF=75A, TJ =25°C IF=75A, TJ =125°C VR=1600V, TJ =25°C VR=1600V, TJ =125°C Min Typ 1.25 1.15 Max 50 1 0.66 Brake-Chopper Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified) Symbol IGBT VCES VGES IC ICM Ptot Diode VRRM IF(AV) IFRM I2t Parameters Collector - Emitter Voltage Gate - Emitter Voltage DC Collector Current Repetitive Peak Collector Current Power Dissipation Per IGBT Repetitive Reverse Voltage Average Forward Current Repetitive Peak Forward Current Test Conditions TJ=25°C TC=25°C TC=80°C tp=1ms TJ=25°C TC=25°C TC=80°C tp=1ms TJ =125°C, t=10ms, VR=0V Values 1200 ±20 55 40 80 195 1200 35 25 50 200 Unit V A A A2s Unit V V μA mA K/W Unit V V A A A W V A A A A2s MG1275W-XBN2MM 2358 ©2015 Littelfuse, Inc Specifications are subject to change without notice. Revised:12/04/14 Power Module 1200V 75A IGBT Module Brake-Chopper Electrical and Thermal Characteristics (TJ = 25°C, unless otherwise specified) Symbol IGBT VGE(th) VCE(sat) IICES IGES RGint Qge Cies Cres td(on) Parameters Gate - Emitter Threshold Vo.


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