Document
Power Module 1200V 75A IGBT Module MG1275W-XBN2MM
RoHS
Features
• High level of integration—only one power semiconductor module required for the whole drive
• Low saturation voltage and positive temperature coefficient
• Fast switching and short tail current
• Free wheeling diodes with fast and soft reverse recovery
• Industry standard package with insulated copper base plate and soldering pins for PCB mounting
• Temperature sense included
Applications
• AC motor control • Motion/servo control
• Inverter and power supplies
Module Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
TJ max) TJ op Tstg Visol CTI
Md
Weight
Parameters
Max. Junction Temperature Operating Temperature Storage Temperature Insulation Test Voltage
Comparative Tracking Index Mounting Torque
Test Conditions
AC, t=1min Recommended (M5)
Min Typ Max
150 -40 125 -40 125
3000 250 2.5 5
300
Unit °C °C °C V
N·m g
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol IGBT
VCES VGES
IC
ICM Ptot Diode VRRM
IF(AV)
IFRM I2t
Parameters
Collector - Emitter Voltage Gate - Emitter Voltage DC Collector Current
Repetitive Peak Collector Current Power Dissipation Per IGBT
Repetitive Reverse Voltage Average Forward Current Repetitive Peak Forward Current
Test Conditions
TJ=25°C
TC=25°C TC=80°C tp=1ms
TJ=25°C TC=25°C TC=80°C tp=1ms TJ =125°C, t=10ms, VR=0V
MG1275W-XBN2MM
2156
Values
1200 ±20 105 75 150 348
1200 105 75 150 1150
Unit
V V A A A W
V A A A A2s
©2015 Littelfuse, Inc
Specifications are subject to change without notice. Revised:12/04/14
Power Module 1200V 75A IGBT Module
Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
Min Typ Max
IGBT
VGE(th)
VCE(sat)
IICES
IGES RGint Qge
Gate - Emitter Threshold Voltage Collector - Emitter Saturation Voltage
Collector Leakage Current
Gate Leakage Current Integrated Gate Resistor
Gate Charge
VCE=VGE, IC=3.0mA IC=75A, VGE=15V, TJ=25°C IC=75A, VGE=15V, TJ=125°C VCE=1200V, VGE=0V, TJ=25°C VCE=1200V, VGE=0V, TJ=125°C VCE=0V, VGE=±15V, TJ=125°C
VCE=600V, IC=75A , VGE=±15V
5.0 5.8 1.7 1.9
-400 10 0.7
6.5
1 10 400
Cies Input Capacitance Cres Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
5.3 0.2
td(on)
tr
td(off)
tf
Eon
Eoff ISC RthJC Diode
Turn - on Delay Time
TJ=25°C TJ=125°C
Rise Time Turn - off Delay Time
Fall Time Turn - on Energy
VCC=600V IC=75A
RG =4.7Ω VGE=±15V Inductive Load
TJ=25°C TJ=125°C TJ=25°C TJ=125°C TJ=25°C TJ=125°C TJ=25°C TJ=125°C
Turn - off Energy
TJ=25°C TJ=125°C
Short Circuit Current
tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V
Junction-to-Case Thermal Resistance (Per IGBT)
260 290 30 50 420 520 70 90 6.6 9.4 6.8 8.0 300
0.36
VF
tRR IRRM Erec RthJCD
Forward Voltage
Reverse Recovery Time Max. Reverse Recovery Current
Reverse Recovery Energy
IF=75A, VGE=0V, TJ =25°C IF=75A, VGE=0V, TJ =125°C
IF=75A, VR=600V diF/dt=2000A/µs
TJ=125°C
Junction-to-Case Thermal Resistance (Per Diode)
1.65 1.65 300 85 6.5
0.6
Unit
V V V mA mA nA Ω μC nF
nF ns ns ns ns ns ns ns ns mJ mJ mJ mJ A K/W
V V ns A mJ K/W
MG1275W-XBN2MM
2257
©2015 Littelfuse, Inc Specifications are subject to change without notice.
Revised:12/04/14
Power Module 1200V 75A IGBT Module
Diode-Rectifier Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol VRRM IF(AV)
IFRM
I2t
Parameters Repetitive Reverse Voltage
Average Forward Current
Non-Repetitive Surge Forward Current
Test Conditions
TJ=25°C
TC=80°C TJ=45°C, t=10ms, 50Hz TJ=45°C, t=8.3ms, 60Hz TJ=45°C, t=10ms, 50Hz TJ=45°C, t=8.3ms, 60Hz
Values 1600
75
450 400 1012 800
Diode-Rectifier Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
Symbol VF IR
RthJCD
Parameters Forward Voltage
Reverse Leakage Current Junction-to-Case Thermal
Resistance (Per Diode)
Test Conditions
IF=75A, TJ =25°C IF=75A, TJ =125°C VR=1600V, TJ =25°C VR=1600V, TJ =125°C
Min
Typ 1.25 1.15
Max
50 1 0.66
Brake-Chopper Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol IGBT
VCES VGES
IC
ICM Ptot Diode VRRM
IF(AV)
IFRM I2t
Parameters
Collector - Emitter Voltage Gate - Emitter Voltage DC Collector Current
Repetitive Peak Collector Current Power Dissipation Per IGBT
Repetitive Reverse Voltage Average Forward Current Repetitive Peak Forward Current
Test Conditions
TJ=25°C
TC=25°C TC=80°C tp=1ms
TJ=25°C TC=25°C TC=80°C tp=1ms TJ =125°C, t=10ms, VR=0V
Values
1200 ±20 55 40 80 195
1200 35 25 50 200
Unit V A A
A2s
Unit V V μA mA
K/W
Unit
V V A A A W
V A A A A2s
MG1275W-XBN2MM
2358
©2015 Littelfuse, Inc Specifications are subject to change without notice.
Revised:12/04/14
Power Module 1200V 75A IGBT Module
Brake-Chopper Electrical and Thermal Characteristics (TJ = 25°C, unless otherwise specified)
Symbol IGBT
VGE(th)
VCE(sat)
IICES
IGES RGint Qge Cies Cres
td(on)
Parameters
Gate - Emitter Threshold Vo.