MG12200D-BN2MM Module Datasheet

MG12200D-BN2MM Datasheet PDF, Equivalent


Part Number

MG12200D-BN2MM

Description

IGBT Module

Manufacture

Littelfuse

Total Page 5 Pages
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MG12200D-BN2MM
Power Module
1200V 200A IGBT Module
MG12200D-BN2MM
RoHS ®
Features
• H igh short circuit
capability, self limiting
short circuit current
• IGBT3 CHIP(Trench+Field
Stop technology)
• VteCmE(spat)ewraittuhrepocsoiteivffeicient
• Fast switching and short
tail current
• Free wheeling diodes
with fast and soft reverse
recovery
• Low switching losses
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E71639
Applications
• Medical applications
• High frequency switching
application
• Motion/servo control
• UPS systems
Module Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
TJ max
TJ op
Tstg
Visol
CTI
Torque
Torque
Weight
Parameters
Max. Junction Temperature
Operating Temperature
Storage Temperature
Insulation Test Voltage
Comparative Tracking Index
Module-to-Sink
Module Electrodes
Test Conditions
AC, t=1min
Recommended (M6)
Recommended (M6)
Min Typ Max
150
-40 125
-40 125
3000
350
3
2.5
5
5
320
Unit
°C
°C
°C
V
N·m
N·m
g
Absolute Maximum Ratings (TC = 25°C, unless otherwise specified)
Symbol
IGBT
VCES
VGES
IC
ICM
Ptot
Diode
VRRM
IF(AV)
IFRM
I2t
Parameters
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Repetitive Peak Collector Current
Power Dissipation Per IGBT
Repetitive Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
Test Conditions
TJ =25°C
TC=25°C
TC=80°C
tp=1ms
TJ =25°C
TC=25°C
TC=80°C
TJ =125°C, t=10ms, VR =0V
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
MG12200D-BN2MM
1158
Values
1200
±20
290
200
400
1050
1200
290
200
400
7750
Unit
V
V
A
A
A
W
V
A
A
A
A2s
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16

MG12200D-BN2MM
Power Module
1200V 200A IGBT Module
Electrical and Thermal Specifications (TC = 25°C, unless otherwise specified)
Symbol
IGBT
VGE(th)
VCE(sat)
IICES
IGES
RGint
Qge
Cies
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
ISC
RthJC
Diode
VF
tRR
IRRM
Erec
RthJCD
Parameters
Test Conditions
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
VCE=VGE, IC=8mA
IC=200A, VGE=15V, TJ=25°C
IC=200A, VGE=15V, TJ=125°C
VCE=1200V, VGE=0V, TJ=25°C
VCE=1200V, VGE=0V, TJ=125°C
VCE=0V, VGE=±15V, TJ=125°C
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
VCE=600V, IC=200A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
Turn - on Delay Time
TJ=25°C
TJ=125°C
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Energy
VCC=600V
IC=200A
RG =3.6Ω
VGE=±15V
Inductive Load
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
Turn - off Energy
TJ=25°C
TJ=125°C
Short Circuit Current
tpsc≤10μS , VGE=15V, TJ=125°C , VCC=900V
Junction-to-Case Thermal Resistance (Per IGBT)
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Energy
IF=200A, VGE=0V, TJ =25°C
IF=200A, VGE=0V, TJ =125°C
IF=200A, VR=600V
diF/dt=-4000A/µs
TJ=125°C
Junction-to-Case Thermal Resistance (Per Diode)
Min
5.0
-400
Typ
5.8
1.7
1.9
3.8
1.9
14
0.5
160
170
40
45
450
520
100
160
10
15
16.5
25
800
1.65
1.65
190
36
17
Max
6.5
1
5
400
0.12
0.2
Unit
V
V
V
mA
mA
nA
Ω
μC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K/W
V
V
ns
A
mJ
K/W
MG12200D-BN2MM
1259
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16


Features Power Module 1200V 200A IGBT Module MG1 2200D-BN2MM RoHS ® Features • H i gh short circuit capability, self limit ing short circuit current • IGBT3 CH IP(Trench+Field Stop technology) • V teCmE(spat)ewraittuhrepocsoiteivffeicie nt • Fast switching and short tail current • Free wheeling diodes with fast and soft reverse recovery • Low switching losses Agency Approvals AGE NCY AGENCY FILE NUMBER E71639 Applica tions • Medical applications • Hi gh frequency switching application • Motion/servo control • UPS systems Module Characteristics (TJ = 25°C, u nless otherwise specified) Symbol TJ m ax TJ op Tstg Visol CTI Torque Torque W eight Parameters Max. Junction Tempera ture Operating Temperature Storage Temp erature Insulation Test Voltage Compara tive Tracking Index Module-to-Sink Modu le Electrodes Test Conditions AC, t=1m in Recommended (M6) Recommended (M6) M in Typ Max 150 -40 125 -40 125 3000 3 50 3 2.5 5 5 320 Unit °C °C °C V N·m N·m g Absolute Maximum Ratings (TC = 25°C, u.
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