TN3015H-6T SCRs Datasheet

TN3015H-6T Datasheet PDF, Equivalent


Part Number

TN3015H-6T

Description

High temperature 30A 600V TO220 thyristor SCRs

Manufacture

STMicroelectronics

Total Page 10 Pages
PDF Download
Download TN3015H-6T Datasheet PDF


TN3015H-6T
TN3015H-6T
Datasheet
High temperature 30 A, 600 V TO220 thyristor SCRs
A
G
K
A
K
AG
TO-220AB
Product status
TN3015H-6T
Product summary
Order code
TN3015H-6T
Package
TO-220AB
VDRM/VRRM
600 V
Tj 150 °C
IGT 15 mA
Features
• High junction temperature: Tj = 150 °C
• High noise immunity dV/dt = 1000 V/µs up to 150 °C
• Gate triggering current IGT = 15 mA
• Peak off-state voltage VDRM/VRRM = 600 V
• High turn-on current rise dI/dt = 100 A/µs
ECOPACK2 compliant
Applications
• General purpose AC line load switching
• Motorbike voltage regulator circuits
• Inrush current limiting circuits
• Motor control circuits and starters
• Heating resistor control, solid state relays
• Lighting
Description
Thanks to a junction temperature Tj up to 150 °C and a non-isolated TO-220
package, the TN3015H-6T offers high thermal performance operation up to 30 A rms.
The trade-off between the device’s noise immunity (dV/dt = 1000 V/μs), its gate
triggering current (IGT = 15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows
the design of robust and compact control circuits for voltage regulators in motorbikes
and industrial drives, overvoltage crowbar protection, motor control circuits in power
tools and kitchen appliances and inrush current limiting circuits.
DS12966 - Rev 2 - July 2019
For further information contact your local STMicroelectronics sales office.
www.st.com

TN3015H-6T
TN3015H-6T
Characteristics
1 Characteristics
Symbol
IT(RMS)
IT(AV)
ITSM
I2t
dl/dt
VDRM/VRRM
VDSM/VRSM
IGM
PG(AV)
VRGM
Tstg
Tj
Tl
Table 1. Absolute maximum ratings (limiting values)
Parameter
RMS on-state current (180 ° conduction angle)
Average on-state current (180 ° conduction angle)
Non repetitive surge peak on-state current (Tj initial = 25 °C)
I2t value for fusing, (Tj initial = 25 °C)
IG = 2 x IGT, tr ≤ 100 ns
Critical rate of rise of on-state current
Repetitive peak off-state voltage
Non Repetitive peak off-state voltage
Peak gate current
Average gate power dissipation
Maximum peak reverse gate voltage
Storage junction temperature range
f = 60 Hz
tp = 10 ms
tp = 20 µs
Tc = 127 °C
Tc = 127 °C
Tc = 134 °C
Tc = 141 °C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Tj = 25 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 25 °C
Maximum operating junction temperature
Maximum lead temperature soldering during 10 s
Value
30
19
15
10
295
270
364
Unit
A
A
A
A2s
100 A/µs
600
VDRM/VRRM +100
4
1
5
-40 to +150
-40 to +150
260
V
V
A
W
V
°C
°C
°C
Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)
Symbol
Test conditions
IGT
VGT
VGD
IH
IL
dV/dt
tgt
tq
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 3.3 kΩ
IT = 500 mA, gate open
IG = 1.2 x IGT
VD = 402 V, gate open
IT = 60 A, VD = 600 V, IG = 100 mA, (dIG/dt) max = 0.2 A/µs
IT = 30 A, VD = 402 V, (di/dt)off = 30 A/µs, VR = 25 V, dVD/dt = 50 V/µs
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Value Unit
Typ.
Max.
6
15
mA
Max. 1.3
V
Min. 0.15 V
Max. 60 mA
Max. 75 mA
Min. 1000 V/µs
Typ. 1.9 µs
Typ. 80 µs
DS12966 - Rev 2
page 2/10


Features TN3015H-6T Datasheet High temperature 30 A, 600 V TO220 thyristor SCRs A G K A K AG TO-220AB Product status TN3015H- 6T Product summary Order code TN3015 H-6T Package TO-220AB VDRM/VRRM 600 V Tj 150 °C IGT 15 mA Features • High junction temperature: Tj = 150 ° C • High noise immunity dV/dt = 1000 V/µs up to 150 °C • Gate triggering current IGT = 15 mA • Peak off-state voltage VDRM/VRRM = 600 V • High tur n-on current rise dI/dt = 100 A/µs • ECOPACK2 compliant Applications • Ge neral purpose AC line load switching Motorbike voltage regulator circuits • Inrush current limiting circuits Motor control circuits and starters Heating resistor control, solid stat e relays • Lighting Description Thank s to a junction temperature Tj up to 15 0 °C and a non-isolated TO-220 package , the TN3015H-6T offers high thermal pe rformance operation up to 30 A rms. The trade-off between the device’s noise immunity (dV/dt = 1000 V/μs), its gate triggering current (IGT = 15 mA) and its turn-on curren.
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