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BYC30X-600P Dataheets PDF



Part Number BYC30X-600P
Manufacturers WeEn
Logo WeEn
Description Hyperfast power diode
Datasheet BYC30X-600P DatasheetBYC30X-600P Datasheet (PDF)

BYC30X-600P Hyperfast power diode Rev.02 - 18 December 2018 Product data sheet 1. General description Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits • Isolated plastic package • Low leakage current • Low thermal resistance • Low reverse recovery current • Reduces switching losses in associated MOSFET or IGBT 3. Applications • Active PFC in air conditioner • Continuous Current Mode (CCM) Power Factor Correction (PFC) • Half-bridge/full-bridge switc.

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BYC30X-600P Hyperfast power diode Rev.02 - 18 December 2018 Product data sheet 1. General description Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits • Isolated plastic package • Low leakage current • Low thermal resistance • Low reverse recovery current • Reduces switching losses in associated MOSFET or IGBT 3. Applications • Active PFC in air conditioner • Continuous Current Mode (CCM) Power Factor Correction (PFC) • Half-bridge/full-bridge switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM IF(AV) IFRM IFSM repetitive peak reverse voltage average forward current repetitive peak forward current non-repetitive peak forward current δ = 0.5 ; square-wave pulse; Th ≤ 51 °C; Fig. 1; Fig. 2; Fig. 3 δ = 0.5 ; tp = 25 μs; Th ≤ 51 °C; square-wave pulse tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse Symbol Parameter Conditions Static characteristics VF forward voltage IF = 30 A; Tj = 25 °C; Fig. 6 IF = 30 A; Tj = 150 °C; Fig. 6 Dynamic characteristics trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs; Tj = 25 °C; Fig. 7 Values Unit 600 V 30 A 60 A 200 A 220 Min Typ A Max Unit - 2 2.75 V - 1.38 1.8 V - - 35 ns WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A anode mb n.c. mounting base; isolated Simplified outline mb BYC30X-600P Ultrafast power diode Graphic symbol K A 001aaa020 12 SOD113 (2-lead TO-220F) 6. Ordering information Table 3. Ordering information Type number Package Name BYC30X-600P TO-220F Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 "full pack" Version SOD113 7. Marking Table 4. Marking codes Type number BYC30X-600P Marking codes BYC30X-600P BYC30X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 18 December 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 10 WeEn Semiconductors BYC30X-600P Ultrafast power diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM repetitive peak reverse voltage VRWM crest working reverse voltage VR reverse voltage DC IF(AV) average forward current δ = 0.5 ; square-wave pulse; Th ≤ 51 °C; Fig. 1; Fig. 2; Fig. 3 IFRM repetitive peak forward δ = 0.5 ; tp = 25 μs; Th ≤ 51 °C; current square-wave pulse IFSM non-repetitive peak tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; forward current Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse Tstg storage temperature Tj junction temperature Values Unit 600 V 600 V 600 V 30 A 60 A 200 A 220 A -65 to 175 °C 175 °C 90 Ptot (W) 60 30 003aak738 δ=1 0.5 0.2 0.1 60 Ptot (W) 40 20 003aak739 a = 1.57 1.9 2.2 2.8 4.0 0 0 10 20 30 40 50 IF(AV) (A) IF(AV) = IF(RMS) × √δ Vo = 1.798 V; Rs = 0.003 Ω Fig. 1. Forward power dissipation as a function of average forward current; square waveform; maximum values 0 0 10 20 30 IF(AV) (A) a = form factor = IF(RMS) / IF(AV) Vo = 1.798 V; Rs = 0.003 Ω Fig. 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values BYC30X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 18 December 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 10 WeEn Semiconductors BYC30X-600P Ultrafast power diode 40 IF(AV) (A) 30 51 °C 003aak740 20 10 0 -50 0 50 100 150 200 Th (°C) Fig. 3. Forward current as a function of heatsink temperature; maximum values 104 IFSM (A) 103 003aak741 102 IF IFSM 10 10-5 10-4 tp t Tj(init) = 25 °C max 10-3 10-2 tp (s) Fig. 4. Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values BYC30X-600P Product data sheet All information provided in this document is subject to legal disclaimers. 18 December 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 10 WeEn Semiconductors BYC30X-600P Ultrafast power diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-c) thermal resistance from junction to case Rth(c-h) thermal resistance from case to heatsink Rth(j-a) thermal resistance from junction to ambient free air Conditions with heatsink compound; in free air Min Typ Max Unit - - 3 K/W - 0.5 - K/W - 55 - K/W 10 Zth(j-h) (K/W) 1 003aak764 10-1 10-2 10-3 10-4 10-6 10-5 10-4 δ = 0.5 δ = 0.3 δ = 0.1 δ = 0.05 δ = 0.02 δ = 0.01 single pulse 10-3 10-2 10-1 P tp δ= T tp T 1 tp (s) t 10 Fig. 5. Transient thermal impedance from junction to heatsink as a fun.


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