Document
BYC30X-600P
Hyperfast power diode
Rev.02 - 18 December 2018
Product data sheet
1. General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
• Isolated plastic package • Low leakage current • Low thermal resistance • Low reverse recovery current • Reduces switching losses in associated MOSFET or IGBT
3. Applications
• Active PFC in air conditioner • Continuous Current Mode (CCM) Power Factor Correction (PFC) • Half-bridge/full-bridge switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data Symbol Parameter Absolute maximum rating
Conditions
VRRM IF(AV) IFRM IFSM
repetitive peak reverse voltage average forward current
repetitive peak forward current non-repetitive peak forward current
δ = 0.5 ; square-wave pulse; Th ≤ 51 °C; Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; tp = 25 μs; Th ≤ 51 °C; square-wave pulse
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse
Symbol Parameter
Conditions
Static characteristics
VF
forward voltage
IF = 30 A; Tj = 25 °C; Fig. 6
IF = 30 A; Tj = 150 °C; Fig. 6
Dynamic characteristics
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs;
Tj = 25 °C; Fig. 7
Values
Unit
600
V
30
A
60
A
200
A
220 Min Typ
A Max Unit
-
2
2.75 V
-
1.38 1.8 V
-
-
35
ns
WeEn Semiconductors
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
cathode
2
A
anode
mb
n.c.
mounting base; isolated
Simplified outline
mb
BYC30X-600P
Ultrafast power diode
Graphic symbol
K
A
001aaa020
12 SOD113 (2-lead TO-220F)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BYC30X-600P
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 "full pack"
Version SOD113
7. Marking
Table 4. Marking codes Type number BYC30X-600P
Marking codes BYC30X-600P
BYC30X-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 December 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
2 / 10
WeEn Semiconductors
BYC30X-600P
Ultrafast power diode
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VRRM
repetitive peak reverse voltage
VRWM
crest working reverse voltage
VR
reverse voltage
DC
IF(AV)
average forward current δ = 0.5 ; square-wave pulse; Th ≤ 51 °C;
Fig. 1; Fig. 2; Fig. 3
IFRM
repetitive peak forward
δ = 0.5 ; tp = 25 μs; Th ≤ 51 °C;
current
square-wave pulse
IFSM
non-repetitive peak
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;
forward current
Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse
Tstg
storage temperature
Tj
junction temperature
Values
Unit
600
V
600
V
600
V
30
A
60
A
200
A
220
A
-65 to 175
°C
175
°C
90 Ptot (W)
60
30
003aak738 δ=1
0.5
0.2 0.1
60 Ptot (W)
40
20
003aak739 a = 1.57
1.9 2.2 2.8
4.0
0
0
10
20
30
40
50
IF(AV) (A)
IF(AV) = IF(RMS) × √δ Vo = 1.798 V; Rs = 0.003 Ω
Fig. 1. Forward power dissipation as a function of average forward current; square waveform; maximum values
0
0
10
20
30
IF(AV) (A)
a = form factor = IF(RMS) / IF(AV) Vo = 1.798 V; Rs = 0.003 Ω
Fig. 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values
BYC30X-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 December 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
3 / 10
WeEn Semiconductors
BYC30X-600P
Ultrafast power diode
40
IF(AV) (A) 30
51 °C
003aak740
20
10
0
-50
0
50
100
150
200
Th (°C)
Fig. 3. Forward current as a function of heatsink temperature; maximum values
104
IFSM (A)
103
003aak741
102
IF
IFSM
10 10-5
10-4
tp
t
Tj(init) = 25 °C max
10-3
10-2
tp (s)
Fig. 4. Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values
BYC30X-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 December 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
4 / 10
WeEn Semiconductors
BYC30X-600P
Ultrafast power diode
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Rth(j-c)
thermal resistance from junction to case
Rth(c-h)
thermal resistance from case to heatsink
Rth(j-a)
thermal resistance from junction to ambient free air
Conditions
with heatsink compound; in free air
Min Typ Max Unit
-
-
3
K/W
-
0.5
-
K/W
-
55
-
K/W
10 Zth(j-h) (K/W)
1
003aak764
10-1 10-2 10-3 10-4
10-6
10-5
10-4
δ = 0.5 δ = 0.3 δ = 0.1 δ = 0.05 δ = 0.02 δ = 0.01 single pulse
10-3
10-2
10-1
P
tp δ= T
tp T
1 tp (s)
t 10
Fig. 5. Transient thermal impedance from junction to heatsink as a fun.