CSD97370Q5M Stage Datasheet

CSD97370Q5M Datasheet PDF, Equivalent


Part Number

CSD97370Q5M

Description

Synchronous Buck NexFET Power Stage

Manufacture

etcTI

Total Page 21 Pages
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CSD97370Q5M
www.ti.com
CSD97370Q5M
SLPS314C – JUNE 2011 – REVISED FEBRUARY 2012
Synchronous Buck NexFET™ Power Stage
FEATURES
1
• 90% System Efficiency at 25A
• Input Voltages up to 22V
• High Frequency Operation (Up To 2MHz)
• Incorporates Power Block Technology
• High Density – SON 5-mm × 6-mm Footprint
• Low Power Loss 2.8W at 25A
• Ultra Low Inductance Package
• System Optimized PCB Footprint
• 3.3V and 5V PWM Signal Compatible
• 3-State PWM Input
• Integrated Bootstrap Diode
• Pre-Bias Start-Up Protection
• Shoot Through Protection
• RoHS Compliant – Lead Free Terminal Plating
Halogen Free
APPLICATIONS
• Synchronous Buck Converters
• Multiphase Synchronous Buck Converters
• POL DC-DC Converters
• Memory and Graphic Cards
• Desktop and Server VR11.x and VR12.x V-Core
Synchronous Buck Converters
ORDERING INFORMATION
Device
Package
Media Qty
CSD97370Q5M
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
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DESCRIPTION
The CSD97370Q5M NexFET Power Stage is an optimized design for use in a high power, high density
Synchronous Buck converter. This product integrates an enhanced gate driver IC and Power Block Technology
to complete the power stage switching function. This combination produces a high current, high efficiency, high
speed switching device and delivers an excellent thermal solution in a small 5-mm × 6-mm outline package due
to its large ground based thermal pad. In addition, the PCB footprint has been optimized to help reduce design
time and simplify the completion of the overall system design.
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VDD
VOUT
CSD97370Q5M
VCC
VOUT PWM1
SS
PWM2
RT
PGND
Multi Phase
Control IC
CSD97370Q5M
LO
LO
Figure 1. Application Diagram
VIN
CIN
VOUT
COUT
S0488-03
100
90
80
70
60
50
40
0
VGS = 5V
VIN = 12V
VOUT = 1.2V
LOUT = 0.3µH
fSW = 500kHz
TA = 25ºC
5 10 15 20
Output Current (A)
6
5
4
3
2
1
0
25
Figure 2. Efficiency and Power Loss
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011–2012, Texas Instruments Incorporated

CSD97370Q5M
CSD97370Q5M
SLPS314C – JUNE 2011 – REVISED FEBRUARY 2012
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS(1)
TA = 25°C (unless otherwise noted)
VIN to PGND (2)
VSW to PGND , VIN to VSW
VSW to PGND (10ns)
VDD to PGND
ENABLE to PGND(3)
PWM to PGND(3)
BOOT to BOOT_R(3)
Human Body Model (HBM)
ESD Rating
Charged Device Model (CDM)
Power Dissipation, PD
Operating Temperature Range, TJ
Storage Temperature Range, TSTG
MIN
-0.8
-7
–0.3
–0.3
–0.3
–0.3
-40
–55
VALUE
MAX
30
30
32
7
VDD + 0.3
VDD + 0.3
VDD + 0.3
2
500
12
150
150
UNIT
V
V
V
V
V
V
V
kV
V
W
°C
°C
(1) Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating
Conditions" is not implied. Exposure to Absolute Maximum rated conditions for extended periods may affect device reliability.
(2) VIN to VSW Max = 32V for 10ns
(3) Should not exceed 7V
RECOMMENDED OPERATING CONDITIONS
TA = 25° (unless otherwise noted)
Parameter
Conditions
Gate Drive Voltage, VDD
Input Supply Voltage, VIN
Output Voltage, VOUT
Continuous Output Current, IOUT
Peak Output Current, IOUT-PK(2)
Switching Frequency, fSW
On Time Duty Cycle
VIN = 12V, VDD = 5V, VOUT = 1.2V,
fSW = 500kHz, LOUT = 0.3µH(1)
CBST = 0.1µF (min)
Minimum PWM On Time
Operating Temperature
MIN MAX UNIT
4.5 5.5 V
3.3 22 V
5.5 V
40 A
60 A
200 2000 kHz
85%
40 ns
–40 125 °C
(1) Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins.
(2) System conditions as defined in Note 1. Peak Output Current is applied for tp = 50µs.
THERMAL INFORMATION
TA = 25°C (unless otherwise noted)
PARAMETER
RθJC
RθJB
Thermal Resistance, Junction-to-Case (Top of package)
Thermal Resistance, Junction-to-Board(1)
MIN TYP MAX UNIT
20 °C/W
2 °C/W
(1) RθJB value based on hottest board temperature within 1mm of the package.
2 Submit Documentation Feedback
Copyright © 2011–2012, Texas Instruments Incorporated


Features www.ti.com CSD97370Q5M SLPS314C – JUN E 2011 – REVISED FEBRUARY 2012 Synchr onous Buck NexFET™ Power Stage FEATU RES 1 • 90% System Efficiency at 25A • Input Voltages up to 22V • High F requency Operation (Up To 2MHz) • Inc orporates Power Block Technology • Hi gh Density – SON 5-mm × 6-mm Footpri nt • Low Power Loss 2.8W at 25A • U ltra Low Inductance Package • System Optimized PCB Footprint • 3.3V and 5V PWM Signal Compatible • 3-State PWM Input • Integrated Bootstrap Diode Pre-Bias Start-Up Protection • Shoo t Through Protection • RoHS Compliant – Lead Free Terminal Plating Halogen Free APPLICATIONS • Synchronous Buc k Converters • Multiphase Synchronous Buck Converters • POL DC-DC Converte rs • Memory and Graphic Cards • Des ktop and Server VR11.x and VR12.x V-Cor e Synchronous Buck Converters ORDERING INFORMATION Device Package Media Qt y CSD97370Q5M SON 5-mm × 6-mm Plasti c Package 13-Inch Reel 2500 Ship Tape and Reel spacer spacer spacer spacer DESCRIPTION The CSD97370Q5M NexFE.
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