CSD87501L MOSFET Datasheet

CSD87501L Datasheet PDF, Equivalent


Part Number

CSD87501L

Description

30-V Dual Common Drain N-Channel NexFET Power MOSFET

Manufacture

etcTI

Total Page 14 Pages
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CSD87501L
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CSD87501L
SLPS523B – FEBRUARY 2015 – REVISED MAY 2019
CSD87501L 30-V Dual Common Drain N-Channel NexFET™ Power MOSFET
1 Features
1 Low on-resistance
• Small footprint of 3.37 mm × 1.47 mm
• Ultra-low profile – 0.2-mm high
• Lead free
• RoHS compliant
• Halogen free
• Gate ESD protection
Product Summary
TA = 25°C
VS1S2
Source-to-Source Voltage
Qg Gate Charge Total (4.5 V)
Qgd Gate Charge Gate-to-Drain
RS1S2(on)
Source-to-Source On-
Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
30
15
6.0
VGS = 4.5 V
VGS = 10 V
1.8
9.3
6.6
UNIT
V
nC
nC
m
V
2 Applications
• Battery management
• Battery protection
• USB Type-C / PD
3 Description
This 30-V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dual
NexFET™ power MOSFET is designed to minimize
resistance and gate charge in a small footprint. Its
small size and common drain configuration make the
device ideal for multi-cell battery pack applications
and small handheld devices.
Top View
S1 S1 G1 S1 S1
S2 S2 G2 S2 S2
Configuration
DEVICE
CSD87501L
CSD87501LT
Device Information(1)
MEDIA QTY
PACKAGE
7-Inch Reel 3000
7-Inch Reel 250
3.37 mm × 1.47 mm
Land Grid Array
Package
SHIP
Tape
and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VS1S2 Source-to-Source Voltage
VGS Gate-to-Source Voltage
IS Continuous Source Current(1)
ISM Pulsed Source Current(2)
PD Power Dissipation
V(ESD) Human-Body Model (HBM)
TJ, Operating Junction,
Tstg Storage Temperature
VALUE
30
±20
14
72
2.5
2
UNIT
V
V
A
A
W
kV
–55 to 150 °C
(1) Typical RθJA = 50°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in
thick FR4 PCB.
(2) Typical min Cu RθJA = 135°C/W, pulse duration 100 μs, duty
cycle 1%.
Source 1
Source 2
Gate 1
Gate 2
RS1S2(on) vs VGS
24
TC = 25°C, I S = 7 A
21 TC = 125°C, I S = 7 A
18
15
12
9
6
3
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
1
Gate Charge
10
9 IS = 7 A, VS1S2 = 15 V
8
7
6
5
4
3
2
1
0
0 4 8 12 16 20 24 28 32
Qg - Gate Charge (nC)
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD87501L
CSD87501L
SLPS523B – FEBRUARY 2015 – REVISED MAY 2019
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Receiving Notification of Documentation Updates.... 7
6.2 Community Resources.............................................. 7
6.3 Trademarks ............................................................... 7
6.4 Electrostatic Discharge Caution ................................ 7
6.5 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Package Dimensions ................................................ 8
7.2 Recommended PCB Pattern..................................... 9
7.3 Recommended Stencil Pattern ................................. 9
4 Revision History
Changes from Revision A (April 2015) to Revision B
Page
• Added Receiving Notification of Documentation Updates section and Community Resources section ................................ 7
• Added Pin Configuration table in the Mechanical, Packaging, and Orderable Information section ....................................... 8
Changes from Original (February 2015) to Revision A
Page
• Extended Y axis in Figure 9 down to 0.01 A .......................................................................................................................... 4
2 Submit Documentation Feedback
Product Folder Links: CSD87501L
Copyright © 2015–2019, Texas Instruments Incorporated


Features Product Folder Order Now Technical Doc uments Tools & Software Support & Com munity CSD87501L SLPS523B – FEBRUARY 2015 – REVISED MAY 2019 CSD87501L 30 -V Dual Common Drain N-Channel NexFET Power MOSFET 1 Features •1 Low on- resistance • Small footprint of 3.37 mm × 1.47 mm • Ultra-low profile – 0.2-mm high • Lead free • RoHS com pliant • Halogen free • Gate ESD pr otection Product Summary TA = 25°C VS1S2 Source-to-Source Voltage Qg Gat e Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RS1S2(on) Source-to-So urce OnResistance VGS(th) Threshold Vo ltage TYPICAL VALUE 30 15 6.0 VGS = 4.5 V VGS = 10 V 1.8 9.3 6.6 UNIT V nC nC mΩ V 2 Applications • Batte ry management • Battery protection USB Type-C / PD 3 Description This 30 -V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dua l NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small.
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