30-V Dual Common Drain N-Channel NexFET Power MOSFET
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CSD87501L
SLPS523B – FEBRUARY 201...
Description
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CSD87501L
SLPS523B – FEBRUARY 2015 – REVISED MAY 2019
CSD87501L 30-V Dual Common Drain N-Channel NexFET™ Power MOSFET
1 Features
1 Low on-resistance Small footprint of 3.37 mm × 1.47 mm Ultra-low profile – 0.2-mm high Lead free RoHS compliant Halogen free Gate ESD protection
Product Summary
TA = 25°C
VS1S2
Source-to-Source Voltage
Qg Gate Charge Total (4.5 V)
Qgd Gate Charge Gate-to-Drain
RS1S2(on)
Source-to-Source OnResistance
VGS(th) Threshold Voltage
TYPICAL VALUE
30
15
6.0
VGS = 4.5 V VGS = 10 V
1.8
9.3 6.6
UNIT V nC nC
mΩ
V
2 Applications
Battery management Battery protection USB Type-C / PD
3 Description
This 30-V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices.
Top View
S1 S1 G1 S1 S1
S2 S2 G2 S2 S2
Configuration
DEVICE CSD87501L CSD87501LT
Device Information(1)
MEDIA QTY
PACKAGE
7-Inch Reel 3000 7-Inch Reel 250
3.37 mm × 1.47 mm Land Grid Array Package
SHIP
Tape and Reel
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VS1S2 Source-to-Source Voltage
VGS Gate-to-Source Voltage IS Continuous Source Current(1) ISM Pulsed Source Current(2)
PD Power Diss...
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