STW70N65DM6

STW70N65DM6, STWA70N65DM6 Datasheet N-channel 650 V, 36 mΩ typ., 68 A MDmesh™ DM6 Power MOSFETs in TO-247 and TO-247 long leads packages 3 2 1 TO-247 3 12 TO-247 long leads D(2, TAB) Features Order code VDS RDS(on) max. STW70N65DM6 STWA70N65DM6 650 V 40 mΩ Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected ID 68 A G(1) Applications Switching applications S(3) AM01475V1 Product status link STW70N65DM6 STWA70N65DM6 Product summary Order code STW70N65DM6 Marking 70N65DM6 Package TO-247 Packing Tube Order code STWA70N65DM6 Marking 70N65DM6 Package TO-247 long leads Packing Tube Description These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. DS12313 - Rev 2 - July 2019 For further information contact your local STMicroelectronics sales office. www.st.com STW70N65DM6, STWA70N65DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) a...