CSD17578Q5A

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17578Q5A SLPS526 – MARCH 2015 CSD17578Q5A 30 V N-Channel NexFET™ Power MOSFETs 1 Features 1 Low Qg and Qgd Low RDS(on) Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating RoHS Compliant Halogen Free SON 5 mm × 6 mm Plastic Package 2 Applications Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems Optimized for Control FET Applications Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 30 7.9 2.0 VGS = 4.5 V VGS = 10 V 1.5 7.9 5.9 UNIT V nC nC mΩ mΩ V Device CSD17578Q5A CSD17578Q5AT . Ordering Information(1) Media Qty Package 13-Inch Reel 2500 SON 5 x 6 mm 7-Inch Reel 250 Plastic Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description This 30 V, 5.9 mΩ, SON 5 mm x 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 6D G4 D 5D P0093-01 . . Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 30 ±20 25 UNIT V V ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current(1) 59 16 IDM Pulsed D...