30V N-Channe Power MOSFET
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CSD17577Q3A
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Description
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CSD17577Q3A
SLPS515A – AUGUST 2014 – REVISED JANUARY 2016
CSD17577Q3A 30 V N-Channel NexFET™ Power MOSFET
1 Features
1 Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free RoHS Compliant Halogen Free SON 3.3 mm × 3.3 mm Package
2 Applications
Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
Optimized for Control, and Sync FET Applications
3 Description
This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize resistance in power conversion applications.
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S1
8D
S2
7D
S3 G4
D
6D
5D
P0093-01
Product Summary
TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
30
12
2.5
VGS = 4.5 V VGS = 10 V
1.4
5.3 4.0
UNIT V nC nC mΩ mΩ V
DEVICE CSD17577Q3A CSD17577Q3AT
Ordering Information(1)
QTY MEDIA
PACKAGE
SHIP
2500 13-Inch Reel SON 3.3 × 3.3 mm Tape and
250 7-Inch Reel Plastic Package
Reel
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE 30 ±20 35
UNIT V V
ID
Continuous Drain Current (Silicon limited), TC = 25°C
Continuous Drain Current (1)
83 19
IDM Pulsed Drain Cu...
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