CSD17575Q3

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17575Q3 SLPS489A – JUNE 2014 – REVISED AUGUST 2014 CSD17575Q3 30-V N-Channel NexFET™ Power MOSFET 1 Features 1 Low Qg and Qgd Low RDS(on) Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 3.3 mm × 3.3 mm Plastic Package 2 Applications Point of Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems Optimized for Synchronous FET Applications Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source OnResistance Vth Threshold Voltage TYPICAL VALUE 30 23 5.4 VGS = 4.5 V VGS = 10 V 1.4 2.6 1.9 UNIT V nC nC mΩ V Device CSD17575Q3 CSD17575Q3T . Ordering Information(1) Media Qty Package Ship 13-Inch Reel 2500 SON 3.3 × 3.3 mm Tape and 13-Inch Reel 250 Plastic Package Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description This 1.9 mΩ, 30 V, SON 3×3 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 D 6D 5D P0095-01 Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limit) VALUE 30 ±20 60 UNIT V V ID Continuous Drain Current (Silicon Limit), TC = 25°C Continuous Drain Current(1) IDM Pulsed Dr...