Document
TRF4002 PCS RF POWER AMPLIFIER
D Power Amplifier for 1.9-GHz CDMA
Applications
D 0.5-Micron GaAs MESFET Technology D Operates from 3-V to 3.6-V Supply D High Output Power . . . 27.5-dBm Typical at
3-V Supply and 1.9 GHz
D Gain Linearity Better Than 0.5 dB Over a
37-dB Dynamic Range
D High Adjacent Channel Power Rejection D 20-Pin Plastic Surface-Mount TSSOP PWP
PowerPADt(PWP)
GND
NC
NC
PAOUT/VD2 PAOUT/VD2 PAOUT/VD2 PAOUT/VD2
NC
NC
GND
SLWS051 – JANUARY 1999
PWP PACKAGE (TOP VIEW)
1 20 GND 2 19 NC 3 18 NC 4 17 RFIN 5 16 RFIN 6 15 VD1 7 14 VD1 8 13 VGG 9 12 VGG 10 11 GND
description
NC – No internal connection
The TRF4002 personal communications system (PCS) RF power amplifier is a gallium arsenide (GaAs), integrated circuit housed in a 20-pin plastic surface-mount, thin-shrink small outline package (TSSOP). The package has a solderable pad that improves the package thermal performance by bonding the pad to an external thermal plane. The pad also acts as a low-inductance electrical path-to-ground and must be electrically connected to the printed-circuit board (PCB) ground plane as a continuation of the regular package terminals that are designated GND. The integrated circuit is suitable for 1.9-GHz code-division multiple-access (CDMA) applications.
The TRF4002 is a power amplifier that uses a two-stage topology with an on-/off-chip output inductor and impedance matching network to minimize cost. It is suitable for use in mobile systems that require high linearity. It can deliver 27.5-dBm typical output power optimized for minimum adjacent channel power.
These devices have no built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 1999, Texas Instruments Incorporated
•POST OFFICE BOX 655303 DALLAS, TEXAS 75265
1
TRF4002 PCS RF POWER AMPLIFIER
SLWS051 – JANUARY 1999
functional block diagram
RFIN 16, 17
VD1 14, 15
4, 5, 6, 7 PAOUT/VD2
PA 12, 13
VGG
application circuit
R1
VD1, VD2 C5
C1 C2
VGG
R2
RF in
11 12 13 14 15 16 TRF4002 17 18 19 20
L1 = 12 nH R1 = 10 Ω R2 = 0 Ω
C1 = .01 µF C2 = 150 pF C3 = 1.8 pF C4 = 1.8 pF C5 = .01 µF C6 = 20 pF
NOTE: Backside must be electrically grounded
10
9 8 C3 7 6 5 4 W = 22 mil 3 L = 40 mil 2
C4 1
L1 C6
W = 22 mil W = 22 mil L = 100 mil L = 105 mil
FR4 substrate ∈r = 4.3 h = 12 mils 50 Ω line width = 22 mils
RF out
•2 POST OFFICE BOX 655303 DALLAS, TEXAS 7.