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TRF4002 Dataheets PDF



Part Number TRF4002
Manufacturers Texas Instruments
Logo Texas Instruments
Description PCS RF POWER AMPLIFIER
Datasheet TRF4002 DatasheetTRF4002 Datasheet (PDF)

TRF4002 PCS RF POWER AMPLIFIER D Power Amplifier for 1.9-GHz CDMA Applications D 0.5-Micron GaAs MESFET Technology D Operates from 3-V to 3.6-V Supply D High Output Power . . . 27.5-dBm Typical at 3-V Supply and 1.9 GHz D Gain Linearity Better Than 0.5 dB Over a 37-dB Dynamic Range D High Adjacent Channel Power Rejection D 20-Pin Plastic Surface-Mount TSSOP PWP PowerPADt(PWP) GND NC NC PAOUT/VD2 PAOUT/VD2 PAOUT/VD2 PAOUT/VD2 NC NC GND SLWS051 – JANUARY 1999 PWP PACKAGE (TOP VIEW) 1 20 GND 2 1.

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TRF4002 PCS RF POWER AMPLIFIER D Power Amplifier for 1.9-GHz CDMA Applications D 0.5-Micron GaAs MESFET Technology D Operates from 3-V to 3.6-V Supply D High Output Power . . . 27.5-dBm Typical at 3-V Supply and 1.9 GHz D Gain Linearity Better Than 0.5 dB Over a 37-dB Dynamic Range D High Adjacent Channel Power Rejection D 20-Pin Plastic Surface-Mount TSSOP PWP PowerPADt(PWP) GND NC NC PAOUT/VD2 PAOUT/VD2 PAOUT/VD2 PAOUT/VD2 NC NC GND SLWS051 – JANUARY 1999 PWP PACKAGE (TOP VIEW) 1 20 GND 2 19 NC 3 18 NC 4 17 RFIN 5 16 RFIN 6 15 VD1 7 14 VD1 8 13 VGG 9 12 VGG 10 11 GND description NC – No internal connection The TRF4002 personal communications system (PCS) RF power amplifier is a gallium arsenide (GaAs), integrated circuit housed in a 20-pin plastic surface-mount, thin-shrink small outline package (TSSOP). The package has a solderable pad that improves the package thermal performance by bonding the pad to an external thermal plane. The pad also acts as a low-inductance electrical path-to-ground and must be electrically connected to the printed-circuit board (PCB) ground plane as a continuation of the regular package terminals that are designated GND. The integrated circuit is suitable for 1.9-GHz code-division multiple-access (CDMA) applications. The TRF4002 is a power amplifier that uses a two-stage topology with an on-/off-chip output inductor and impedance matching network to minimize cost. It is suitable for use in mobile systems that require high linearity. It can deliver 27.5-dBm typical output power optimized for minimum adjacent channel power. These devices have no built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the gates. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerPAD is a trademark of Texas Instruments Incorporated. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1999, Texas Instruments Incorporated •POST OFFICE BOX 655303 DALLAS, TEXAS 75265 1 TRF4002 PCS RF POWER AMPLIFIER SLWS051 – JANUARY 1999 functional block diagram RFIN 16, 17 VD1 14, 15 4, 5, 6, 7 PAOUT/VD2 PA 12, 13 VGG application circuit R1 VD1, VD2 C5 C1 C2 VGG R2 RF in 11 12 13 14 15 16 TRF4002 17 18 19 20 L1 = 12 nH R1 = 10 Ω R2 = 0 Ω C1 = .01 µF C2 = 150 pF C3 = 1.8 pF C4 = 1.8 pF C5 = .01 µF C6 = 20 pF NOTE: Backside must be electrically grounded 10 9 8 C3 7 6 5 4 W = 22 mil 3 L = 40 mil 2 C4 1 L1 C6 W = 22 mil W = 22 mil L = 100 mil L = 105 mil FR4 substrate ∈r = 4.3 h = 12 mils 50 Ω line width = 22 mils RF out •2 POST OFFICE BOX 655303 DALLAS, TEXAS 7.


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