TRF7003

TRF7003 MOSFET POWER AMPLIFIER D Wide Operating Frequency Range up to 1000 MHz D High Output Power: – Typical Value of 32 dBm at 4.8 V and 900 MHz – Typical Value of 29 dBm at 3.6 V and 900 MHz D High Gain: – Typical Value of 9 dB at 4.8 V and 900 MHz at 32-dBm Output Power D High Power-Added Efficiency (PAE): – Typical Value of 50% at 32-dBm Output Power D Low Cost D Extremely Rugged: – Sustains 20:1 Load Mismatch D Suitable for Various Wireless Applications D Low Leakage Current <1 mA D SOT-89 Plastic Power Package D 1000 V Human Body Model ESD Protection on Gate and Drain SLWS058C – APRIL 1997 – REVISED JULY 1998 PK PACKAGE (TOP VIEW) GS D description The TRF7003 power amplifier is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET) manufactured using the Texas Instruments RFMOS™ process. It is housed in a SOT-89 (PK) plastic power package. The TRF7003, suitable for a variety of wireless applications, has been characterized for global systems for mobile communications (GSM) power amplifier applications. The TRF7003, a rugged, low-cost device, operates from a single-polarity positive power supply and has low leakage current. Typical power output at 900 MHz is 32 dBm, with an associated power gain of 9 dB and 50-percent power-added efficiency (PAE). These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ...