TRF7610

TRF7610 SILICON MOSFET POWER AMPLIFIER IC FOR GSM D Single Positive Power Supply (No Negative Voltage Required) D Advanced Silicon RFMOS™ Technology D 4.8-V Operation for GSM Applications D 35-dBm Typical Output Power D 30-dB Typical Power Gain D 40% Typical PAE with 5-dBm Input Power D 45% Typical PAE with 8-dBm Input Power D Output Power Control D Few External Components Required for Operation D Thermally Enhanced Surface-Mount Package for Small Circuit Footprint D Rugged, Sustains 20:1 Load Mismatch D 800-MHz to 1000-MHz Wide Operational Frequency Range D Low Standby Current (< 10 µA) VG2 VG3 VPC VG1 NC RFIN RFIN NC VG1 VPC VG3 VG2 SLWS059B – MAY 1997 – REVISED AUGUST 1998 PWP PACKAGE (TOP VIEW) 1 24 VD1/VD2 2 23 GND 3 22 RFOUT/VD3 4 21 RFOUT/VD3 5 20 RFOUT/VD3 6 19 RFOUT/VD3 7 18 RFOUT/VD3 8 17 RFOUT/VD3 9 16 RFOUT/VD3 10 15 RFOUT/VD3 11 14 GND 12 13 VD1/VD2 NC – No internal connection description The TRF7610 is a silicon MOSFET power amplifier IC for 900-MHz applications, tailored specifically for global systems for mobile communications (GSM). It uses Texas Instruments RFMOS™ process and consists of a three-stage amplifier with output power control. Few external components are required for operation. The TRF7610 amplifies the RF signal from a preceding modulator and the upconverter stages in an RF section of a transmitter to a level that is sufficient for connection to the antenna. The RF input port, RFIN, and the RF output port, RFOUT, require simple external mat...