INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·High breakdown voltage. (BVCEO = -120V) ·Low colle...
INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
DESCRIPTION ·High breakdown voltage. (BVCEO = -120V) ·Low collector output capacitance. ·High transition frequency. (fT = 50MHz) ·Complement to Type 2SD1857
APPLICATIONS ·Designed for audio amplifier,
voltage
regulator, and general purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous -1.5 A
ICP Collector Current-Pulse
-3 A
PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Range
10 150 -55~150
W ℃ ℃
Product Specification
2SB1236
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
Product Specification
2SB1236
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -0.1A
ICBO Collector Cutoff Current
VCB= -100V; IE= 0
IEBO Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
DC Current Gain
IC= -0.1A ; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.1A ; VCE= -5V
COB Output Capacitance
IE=0; VCB= -10V, ftest= 1MHz
MIN TYP. MAX UNIT -2 V -1.5 V -1.0 μA -1.0 μA
120 390 50 MHz 30 pF
isc website：www.iscsemi.cn
2 isc & iscsemi is registered trademark
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