EDI9F81025C

TEDI EtrCIROi{C D€SGt\|slrc. 2x5l2Kx8StaticnAM CMOSM, odule EDI9F81025C HighSpeedEightMegabiSt RAMModule Features TheED|9F8102i5sCanI megabCitMOSStatic 2x512Kxb8itCMOS tatic RAMbasedontwo512KxS8taticRAMsmounleodna RandoAmccesMs emory multi-layereepdorylamina(tFeR4s)ubstrate. . AccesTsimes7:0,85,and100ns TheEDI9F81025Cor'igsanizeadstwoseparate . CommoAnddresasndDataPins banksof512KxBRandomAccessMemoryw,ithcom- . DataRetentioFnunctio(nEDI9F81025LP) monaddresasnddatapinstominimizme odulseize.lt . TTLCompatibInleputasndOutputs isofferewd ithaccestsimeosf70,85,and100ns. . FullyStaticN,oClocks ItisalsoavailabalesEDl9F81025wLhPic, lheatures36LeadSOICModulNe,o.198 LowPowearndBatterByack-uDpataRetention. Singl+e5V(t10%S) upplOyperation AllinputasndoutputasreTTLcompaiibalnedoper- atefroma single5VsupplyF. ullyasynchronothues, PinNames ED|9F81025reCquirensoclocksorrefreshinfgorop- AO-A18 AddresInsputs eration. wEA.E1 ChipEnable WriteEnable G OutpuElnable DQO-DQ7 CommoDn atalnpuUOutput VCC Powe(r+5V+10%) VSS Ground NC NoConnection PinConfiguration andBlockDiagram NC1 NC2 A18 3 416 4 A14 5 A12 6 A77 A68 A59 A4 10 A3 11 A2 12 A1 13 AA 14 DQ@ 15 DOl 16 DQ2 17 VSS 18 36 VCC 35 NC 34 A15 33 A17 32W 31 413 30 A8 29 A9 28 A11 zz: 26 A10 zs ET 24 EA 23 DQ7 22 DQ6 21 DQs 20 DQ4 19 DQ3 AA-A-1w8 -G ffi DOO-DQ7 (2) Commercial ED\9F81025CRev.3.010/94 1 AbsoluteMaximumRatings' RecommendDeCd OperatinCgonditions VoltagoenanypinrelativteoVSS -0.5Vto7.0V Parameler Sy...