SiSH114ADN

www.vishay.com SiSH114ADN Vishay Siliconix N-Channel 30-V (D-S) MOSFET PowerPAK® 1212-8SH D 5 D 6 D 7 D 8 0.9 mm 3.3 mm 1 3.3 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.0075 0.0098 10.2 35 a, g Single FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Synchronous rectification D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8 SiSH114ADN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Avalanche current Avalanche energy L = 0.1 mH Continuous source-drain diode current TC = 25 °C TA = 25 °C TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e VDS VGS ID IDM IAS EAS IS PD TJ, Tstg LIMIT 30 ± 20 35 g 35 g 18 b, c 14.5 b, c 60 30 45 32 3.2 b, c 39 25 3.7 b, c 2.4 b, c -55 to +150 260 UNIT V A mJ A W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f Maximum junction-to-case (drain) t  10 s Steady sta...