EDH816H64C35

~EDI 64Kx16 CMOS, High Speed Programmable, Static RAM Module EDH816H64C35145155170 High Speed Megabit SRAM Module Features The EDH816H64C is a 1024K-bit high speed CMOS Static RAM Module consisting of sixteen (16) 64Kx1 Static RAMs in leadless chip carriers surfacemounted onto amultilayered ceramic substrate. Four Chip Select lines are provided (one for each 64Kx4 array) allowing the userto configure the memory into a 64Kx16, 128Kx8 or 256Kx4 organizations. The EDH816H64C is available with access times as fast as 35ns. The module is ahigh density, 40 pin sidebrazed DIP on 900 mil centers. All inputs and outputs are TTL compatible and operate from asingle 5V supply. Dual ground pins are provided for maximum noise immunity. Fully asynchronous circuitry requires no clocks or refreshing for operation. EDI Military Modules are constructed using semiconductor components which have been 100% processed to the test methods of MIL-STD-883C, ClassB. High Density 1024K-bit CMOS Static Random Access Memory Module Access Times 35, 45, 55, and 70ns Fully Static, No Clocks Inputs and Outputs Directly TTL Compatible Customer Configured Memory, as 64Kx16, 128Kx8 or 256Kx4 40 Pin Dual-in-line Package Dual Ground Pins for Maximum Noise Immunity Single +5V (±10%) Supply Operation Pin Names A0-A15 £.0-E3 W D00-DQ15 VCC VSS Address Inputs Chip Enables Write Enable Data InpuVOutput Power (+5V±10%) Ground Pin Configuration and Block Diagram VSS 1 0015 2 E3 (12·15) 3 0Q4 4 Vi 5 Al 6 ...