JCS4N65F

N R N-CHANNEL MOSFET JCS4N65F MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson（Vgs=10V） 2.8Ω Qg 27nC   LED APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  LED power supplies   Crss ( 14pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical 14pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes - Halogen-Tube - Halogen-Free-Tube - Halogen-Reel JCS4N65F-F-B JCS4N65F-F-BR N/A - Halogen-Free-Reel N/A Marking JCS4N65F Package TO-220MF ：201806C 1/9 R ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol － Drain-Source Voltage VDSS Drain Current -continuous IDT=25℃ T=100℃ （ 1） Drain Current - pulse （note 1） IDM Gate-Source Voltage VGSS （ 2） Single Pulsed Avalanche Energy (note 2） EAS （ 1） Avalanche Current （note 1） IAR （ 1） Repetitive Avalanche Current （note 1） EAR （ 3） Peak Diode Recovery dv/dt （note 3） dv/dt Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature Range TJ，TSTG Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature JCS4N65F Value JCS4N65F 650 4.0* 2.5* 16* Unit V A A A ±30 V 240 mJ 4.0 10.0 5.5 33 0.26 -55～+150 A mJ V/ns W W/℃ ℃ 300 ℃ ：201806C 2/9 R ELECTRICAL CHARACTERISTICS JCS4N65F Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics － Dr...