2N7002 MOSFET Datasheet

2N7002 Datasheet, PDF, Equivalent


Part Number

2N7002

Description

300mA N-channel Trench MOSFET

Manufacture

nexperia

Total Page 13 Pages
Datasheet
Download 2N7002 Datasheet


2N7002
2N7002
60 V, 300 mA N-channel Trench MOSFET
Rev. 7 — 8 September 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Suitable for logic level gate drive
sources
Very fast switching
Surface-mounted package
Trench MOSFET technology
1.3 Applications
Logic level translators
High-speed line drivers
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
25 °C Tj 150 °C
VGS = 10 V; Tsp = 25 °C; see Figure 1;
see Figure 3
Tsp = 25 °C; see Figure 2
VGS = 10 V; ID = 500 mA; Tj = 25 °C;
see Figure 6; see Figure 8
2. Pinning information
Min Typ Max Unit
- - 60 V
- - 300 mA
- - 0.83 W
-
2.8 5
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G gate
S source
D drain
Simplified outline
3
12
SOT23 (TO-236AB)
Graphic symbol
D
G
mbb076 S

2N7002
Nexperia
2N7002
60 V, 300 mA N-channel Trench MOSFET
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
2N7002
TO-236AB
4. Marking
Description
plastic surface-mounted package; 3 leads
Table 4. Marking codes
Type number
2N7002
[1] % = placeholder for manufacturing site code
5. Limiting values
Marking code[1]
12%
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VDGR
VGS
VGSM
ID
drain-source voltage
drain-gate voltage
gate-source voltage
peak gate-source voltage
drain current
25 °C Tj 150 °C
25 °C Tj 150 °C; RGS = 20 k
pulsed; tp 50 µs; δ = 0.25
VGS = 10 V; Tsp = 25 °C; see Figure 1;
see Figure 3
IDM peak drain current
VGS = 10 V; Tsp = 100 °C; see Figure 1
pulsed; tp 10 µs; Tsp = 25 °C; see
Figure 3
Ptot total power dissipation
Tj junction temperature
Tstg storage temperature
Source-drain diode
Tsp = 25 °C; see Figure 2
IS source current
Tsp = 25 °C
ISM peak source current pulsed; tp 10 µs; Tsp = 25 °C
Version
SOT23
Min Max Unit
- 60 V
- 60 V
-30 30 V
-40 40 V
- 300 mA
- 190 mA
- 1.2 A
- 0.83 W
-65 150 °C
-65 150 °C
- 300 mA
- 1.2 A
2N7002
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 8 September 2011
© Nexperia B.V. 2017. All rights reserved
2 of 13


Features 2N7002 60 V, 300 mA N-channel Trench MOS FET Rev. 7 — 8 September 2011 Produc t data sheet 1. Product profile 1.1 G eneral description N-channel enhancemen t mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. 1.2 Features and benefits  Suitable for logic level gate drive sources  Very fast switching  S urface-mounted package  Trench MOSFE T technology 1.3 Applications  Logi c level translators  High-speed lin e drivers 1.4 Quick reference data Ta ble 1. Symbol VDS ID Quick reference d ata Parameter drain-source voltage drai n current Ptot total power dissipation Static characteristics RDSon drain- source on-state resistance Conditions 25 °C ≤ Tj ≤ 150 °C VGS = 10 V; T sp = 25 °C; see Figure 1; see Figure 3 Tsp = 25 °C; see Figure 2 VGS = 10 V; ID = 500 mA; Tj = 25 °C; see Figure 6 ; see Figure 8 2. Pinning information Min Typ Max Unit - - 60 V - - 300 mA - - 0.83 W - 2.8 5 Ω Table 2. Pin 1 2 3 Pinning information Symbol Description G g.
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