Power MOSFET. IRFS7762PbF Datasheet

IRFS7762PbF MOSFET. Datasheet pdf. Equivalent

IRFS7762PbF Datasheet
Recommendation IRFS7762PbF Datasheet
Part IRFS7762PbF
Description Power MOSFET
Feature IRFS7762PbF; Application  Brushed motor drive applications  BLDC motor drive applications  Battery powered .
Manufacture International Rectifier
Datasheet
Download IRFS7762PbF Datasheet




International Rectifier IRFS7762PbF
Application
 Brushed motor drive applications
 BLDC motor drive applications
 Battery powered circuits
 Half-bridge and full-bridge topologies
 Synchronous rectifier applications
 Resonant mode power supplies
 OR-ing and redundant power switches
 DC/DC and AC/DC converters
 DC/AC inverters
Benefits
 Improved gate, avalanche and dynamic dV/dt ruggedness
 Fully characterized capacitance and avalanche SOA
 Enhanced body diode dV/dt and dI/dt capability
 Lead-free, RoHS compliant
StrongIRFET™
IRFS7762PbF
IRFSL7762PbF
HEXFET® Power MOSFET
  D VDSS
75V
RDS(on) typ.
5.6m
G
max
6.7m
S ID
85A
DD
S
G
D2Pak
IRFS7762PbF
S
GD
TO-262
IRFSL7762PbF
G
Gate
D
Drain
S
Source
Base part number
IRFSL7762PbF
IRFS7762PbF
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
Tube
Tape and Reel Left
50
50
800
Orderable Part Number
IRFSL7762PbF
IRFS7762PbF
IRFS7762TRLPbF
18
ID = 51A
16
14
12 TJ = 125°C
10
8
TJ = 25°C
6
4
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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International Rectifier IRFS7762PbF
  IRFS/SL7762PbF
Absolute Maximum Rating
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current 
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics 
Symbol
Parameter
EAS (Thermally limited) Single Pulse Avalanche Energy 
EAS (Thermally limited) Single Pulse Avalanche Energy 
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case 
RJA Junction-to-Ambient (PCB Mount)
Max.
85
60
335
140
0.95
± 20
-55 to + 175  
300
Max.
160
243
See Fig 15, 16, 23a, 23b
Typ.
–––
–––
Max.
1.05
40
Units
A
W
W/°C
V
°C  
Units
mJ  
A
mJ
Units
°C/W  
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
IGSS
RG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Typ.
–––
58
5.6
6.6
–––
–––
–––
–––
–––
2.5
Max.
–––
–––
6.7
–––
3.7
1.0
150
100
-100
–––
Units
Conditions
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
m
VGS = 10V, ID = 51A
VGS = 6.0V, ID = 26A
V VDS = VGS, ID = 100µA
µA
VDS = 75V, VGS = 0V
VDS = 75V,VGS = 0V,TJ = 125°C
nA
VGS = 20V
VGS = -20V

Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 120µH, RG = 50, IAS = 51A, VGS =10V.
ISD 51A, di/dt 735A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
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February 19, 2015



International Rectifier IRFS7762PbF
  IRFS/SL7762PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
Qg
Qgs
Qgd
Qsync
td(on)
tr
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss
Coss
Crss
Coss eff.(ER)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Coss eff.(TR) Output Capacitance (Time Related)
Diode Characteristics  
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
180 ––– ––– S VDS = 10V, ID = 51A
––– 85 130
ID = 51A
–––
–––
21
26
–––
–––
nC
 VVDGSS
=
=
38V
10V
––– 60 –––
––– 11 –––
VDD = 38V
–––
–––
49
57
–––
–––
ns
ID = 51A
RG= 2.7
––– 40 –––
VGS = 10V
––– 4440 –––
––– 370 –––
VGS = 0V
VDS = 25V
––– 230 ––– pF   ƒ = 1.0MHz, See Fig.7
––– 330 –––
VGS = 0V, VDS = 0V to 60V
––– 430 –––
VGS = 0V, VDS = 0V to 60V
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
85
335
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
G
D
S
VSD
dv/dt
trr
Qrr
IRRM
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
––– ––– 1.2 V TJ = 25°C,IS = 51A,VGS = 0V 
––– 13 ––– V/ns TJ = 175°C,IS = 51A,VDS = 75V
–––
–––
34
46
–––
–––
ns
TJ = 25°C
TJ = 125°C
VDD = 64V
IF = 51A,
–––
–––
54
69
–––
–––
nC
TJ = 25°C
TJ = 125°C
di/dt = 100A/µs 
 
––– 2.7 ––– A TJ = 25°C
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February 19, 2015





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