MOSFET – N-Channel, POWERTRENCH)
80 V, 100 A, 3.9 mW
FDMS039N08B
General Description This N−Channel MOSFET is produced using onsemi’s advance
POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance.
Features
Max RDS(on) = 3.2 mW (Typ.) @ VGS = 10 V, ID = 50 A Low FOM RDS(on) * QG ...
