FDMS039N08B MOSFET Datasheet

FDMS039N08B Datasheet, PDF, Equivalent


Part Number

FDMS039N08B

Description

N-Channel MOSFET

Manufacture

ON Semiconductor

Total Page 8 Pages
Datasheet
Download FDMS039N08B Datasheet


FDMS039N08B
FDMS039N08B
N-Channel PowerTrench® MOSFET
80 V, 100 A, 3.9 mΩ
Features
• RDS(on) = 3.2 mΩ (Typ.) @ VGS = 10 V, ID = 50 A
• Low FOM RDS(on) *QG
• Low Reverse Recovery Charge, Qrr = 80 nC
• Soft Reverse Recovery Body Diode
• Enables Highly Efficiency in Synchronous Rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
Description
This N-Channel MOSFET is produced using ON Semicon-
ductor’s advance PowerTrench® process that has been tailored
to minimize the on-state resistance while maintaining superior
switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
Top Bottom
Pin 1
SS
S
G
D
DDD
Power 56
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TA = 25oC)
- Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
(TA = 25oC)
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 1a)
(Note 2)
(Note 3)
(Note 1a)
FDMS039N08B
80
±20
100
19.4
400
240
104
2.5
-55 to +150
Unit
V
V
A
A
mJ
W
W
oC
(Note 1a)
FDMS039N08B
1.2
50
Unit
oC/W
©2011 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
FDMS039N08B/D

FDMS039N08B
Package Marking and Ordering Information
Device Marking
FDMS039N08B
Device
FDMS039N08B
Package
Power 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 64 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
Min. Typ. Max. Unit
80 -
- 0.04
-V
- V/oC
- - 1 μA
- - ±100 nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Releted Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 50 A
VDS = 10 V, ID = 50 A
2.5 - 4.5 V
- 3.2 3.9 mΩ
- 100 - S
VDS = 40 V, VGS = 0 V
f = 1 MHz
VDS = 40 V, VGS = 0 V
VDS = 40 V, ID = 50 A
VGS = 0 V to 10 V
f = 1 MHz
(Note 4)
-
-
-
-
-
-
-
-
-
5715
881
15
1646
77
34
13
16
1.2
7600
1170
-
-
100
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 40 V, ID = 50 A
VGS = 10 V, RG = 4.7 Ω
(Note 4)
-
-
-
-
42 94 ns
25 60 ns
48 106 ns
17 44 ns
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
- - 100 A
ISM Maximum Pulsed Drain to Source Diode Forward Current
- - 400 A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 50 A
- - 1.3 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 50 A, VDD = 40 V
-
68
- ns
dIF/dt = 100 A/μs
- 80 - nC
Notes:
1.RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Repetitive rating: pulse-width limited by maximum junction temperature.
3. L = 0.3 mH, IAS = 40 A, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
2


Features FDMS039N08B — N-Channel PowerTrench® MOSFET FDMS039N08B N-Channel PowerTren ch® MOSFET 80 V, 100 A, 3.9 mΩ Featu res • RDS(on) = 3.2 mΩ (Typ.) @ VGS = 10 V, ID = 50 A • Low FOM RDS(on) * QG • Low Reverse Recovery Charge, Qrr = 80 nC • Soft Reverse Recovery Body Diode • Enables Highly Efficiency in Synchronous Rectification • Fast Swi tching Speed • 100% UIL Tested • Ro HS Compliant Description This N-Channe l MOSFET is produced using ON Semicondu ctor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining s uperior switching performance. Applicat ions • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor drives and Uninterruptible Power Supplies Top Bo ttom Pin 1 SS S G D DDD Power 56 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Rat ings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS PD TJ, TST G Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - C.
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