CGHV40100 HEMT Datasheet

CGHV40100 Datasheet, PDF, Equivalent


Part Number

CGHV40100

Description

GaN HEMT

Manufacture

Cree

Total Page 12 Pages
Datasheet
Download CGHV40100 Datasheet


CGHV40100
CGHV40100
100 W, DC - 3.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGHV40100, operating from a 50 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGHV40100 ideal for linear and
compressed amplifier circuits. The transistor is available in a 2-lead flange
and pill package.
PPNac: CkaGgHeVT4y0p1e0s0: F44&0C19G3H&V4404100200P6
Typical Performance Over 500 MHz - 2.5 GHz (TC = 25˚C), 50 V
Parameter
500 MHz
1.0 GHz
1.5 GHz
Small Signal Gain
17.6
16.9
17.7
Saturated Output Power
147 100 141
Drain Efficiency @ PSAT
68 56
Input Return Loss
6 5.1
Note:
Measured CW in the CGHV40100F-AMP application circuit.
58
10.5
2.0 GHz
17.5
116
54
5.5
2.5 GHz
14.8
112
54
8.8
Units
dB
W
%
dB
Features
• Up to 3 GHz Operation
• 100 W Typical Output Power
17.5 dB Small Signal Gain at 2.0 GHz
Application Circuit for 0.5 - 2.5 GHz
55 % Efficiency at PSAT
• 50 V Operation
Subject to change without notice.
www.cree.com/rf
1

CGHV40100
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
125
-10, +2
-65, +150
225
20.8
8.7
245
40
Thermal Resistance, Junction to Case3
RθJC
1.62
Thermal Resistance, Junction to Case4
RθJC
1.72
Case Operating Temperature5
TC -40, +150
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3 Measured for the CGHV40100P at PDISS = 83 W.
4 Measured for the CGHV40100F at PDISS = 83 W.
5 See also, Power Derating Curve on Page 5.
Electrical Characteristics (TC = 25˚C)
Units
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
85˚C
Characteristics
DC Characteristics1
Symbol
Min.
Gate Threshold Voltage
VGS(th)
-3.8
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS 15.6
Drain-Source Breakdown Voltage
VBR 150
RF Characteristics3 (TC = 25˚C, F0 = 2.0 GHz unless otherwise noted)
Small Signal Gain
GSS
Power Gain
GP
Power Output at Saturation4
Drain Efficiency
PSAT
η
Typ.
-3.0
-2.7
18.7
17.5
11.0
116
54
Max.
-2.3
Output Mismatch Stress
VSWR
– 10 : 1
Dynamic Characteristics5
Input Capacitance
Output Capacitance
Feedback Capacitance
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV40100-AMP
4 PSAT is defined as IG = 0.208 mA.
5 Includes package
CGS
CDS
CGD
29.3
– 7.3 –
0.61
Units
Conditions
VDC VDS = 10 V, ID = 20.8 mA
VDC VDS = 50 V, ID = 0.6 A
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 20.8 mA
dB VDD = 50 V, IDQ = 0.6 A
dB VDD = 50 V, IDQ = 0.6 A, POUT = PSAT
W VDD = 50 V, IDQ = 0.6 A
% VDD = 50 V, IDQ = 0.6 A, POUT = PSAT
Y No damage at all phase angles,
VDD = 50 V, IDQ = 0.6 A, POUT = 100 W CW
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
pF VDS = 50 V, Vgs = -8 V, f = 1 MHz
Copyright © 2014-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV40100 Rev 3.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf


Features CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatche d, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV401 00, operating from a 50 volt rail, offe rs a general purpose, broadband solutio n to a variety of RF and microwave appl ications. GaN HEMTs offer high efficien cy, high gain and wide bandwidth capabi lities making the CGHV40100 ideal for l inear and compressed amplifier circuits . The transistor is available in a 2-le ad flange and pill package. PPNac: Cka GgHeVT4y0p1e0s0: F44&0C19G3H&V440410020 0P6 Typical Performance Over 500 MHz - 2.5 GHz (TC = 25˚C), 50 V Parameter 500 MHz 1.0 GHz 1.5 GHz Small Signa l Gain 17.6 16.9 17.7 Saturated Out put Power 147 100 141 Drain Efficienc y @ PSAT 68 56 Input Return Loss 6 5 .1 Note: Measured CW in the CGHV40100F -AMP application circuit. 58 10.5 2.0 GHz 17.5 116 54 5.5 2.5 GHz 14.8 112 54 8.8 Units dB W % dB Features • Up to 3 GHz Operation • 100 W Typical Output Power • 17.5 dB Small.
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