BFU520Y
Dual NPN wideband silicon RF transistor
Rev. 1 — 20 February 2014
Product data sheet
1. Product profile
1.1 G...
BFU520Y
Dual
NPN wideband silicon RF
transistor
Rev. 1 — 20 February 2014
Product data sheet
1. Product profile
1.1 General description
Dual
NPN silicon RF
transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package.
The BFU520Y is part of the BFU5 family of
transistors, suitable for small signal to medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF
transistor AEC-Q101 qualified Minimum noise figure (NFmin) = 0.65 dB at 900 MHz Maximum stable gain 19 dB at 900 MHz 11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages Broadband differential amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 87 C
hFE DC current gain
IC = 5 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 10 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 5 30 mA
[1] -
-
450 mW
60 95 200
- 0.48 -
pF
- 10 -
GHz
NXP Semiconductors
BFU520Y
Dual
NPN wideband silicon RF
transistor
Table 1. Quick reference data …continued T...