BFU520Y transistor Datasheet

BFU520Y Datasheet, PDF, Equivalent


Part Number

BFU520Y

Description

Dual NPN wideband silicon RF transistor

Manufacture

NXP

Total Page 20 Pages
Datasheet
Download BFU520Y Datasheet


BFU520Y
BFU520Y
Dual NPN wideband silicon RF transistor
Rev. 1 — 20 February 2014
Product data sheet
1. Product profile
1.1 General description
Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin
SOT363 package.
The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
Maximum stable gain 19 dB at 900 MHz
11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband differential amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 87 C
hFE DC current gain
IC = 5 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 10 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 5 30 mA
[1] -
-
450 mW
60 95 200
- 0.48 -
pF
- 10 -
GHz

BFU520Y
NXP Semiconductors
BFU520Y
Dual NPN wideband silicon RF transistor
Table 1. Quick reference data …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
Gp(max)
NFmin
PL(1dB)
maximum power gain
minimum noise figure
output power at 1 dB gain
compression
IC = 5 mA; VCE = 8 V; f = 900 MHz
IC = 1 mA; VCE = 8 V; f = 900 MHz; S = opt
IC = 10 mA; VCE = 8 V; ZS = ZL = 50 ;
f = 900 MHz
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG.
2. Pinning information
Min
[2] -
-
-
Typ
19
0.65
7.0
Max
-
-
-
Unit
dB
dB
dBm
Table 2.
Pin
1
2
3
4
5
6
Discrete pinning
Description
base1
emitter1
collector2
base2
emitter2
collector1
Simplified outline

Graphic symbol




DDD
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFU520Y - plastic surface-mounted package; 6 leads
4. Marking
Version
SOT363
Table 4. Marking
Type number
BFU520Y
Marking
WB*
Description
* = t : made in Malaysia
* = w : made in China
BFU520Y
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 February 2014
© NXP B.V. 2014. All rights reserved.
2 of 20


Features BFU520Y Dual NPN wideband silicon RF tra nsistor Rev. 1 — 20 February 2014 Pr oduct data sheet 1. Product profile 1 .1 General description Dual NPN silicon RF transistor for high speed, low nois e applications in a plastic, 6-pin SOT3 63 package. The BFU520Y is part of the BFU5 family of transistors, suitable fo r small signal to medium power applicat ions up to 2 GHz. 1.2 Features and ben efits  Low noise, high breakdown RF transistor  AEC-Q101 qualified  M inimum noise figure (NFmin) = 0.65 dB a t 900 MHz  Maximum stable gain 19 dB at 900 MHz  11 GHz fT silicon techn ology 1.3 Applications  Applications requiring high supply voltages and hig h breakdown voltages  Broadband diff erential amplifiers up to 2 GHz  Low noise amplifiers for ISM applications  ISM band oscillators 1.4 Quick ref erence data Table 1. Quick reference d ata Tamb = 25 C unless otherwise spe cified Symbol Parameter Conditions V CB collector-base voltage open emitter VCE collector-emitter voltage open base shorte.
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