RF transistor. BFU530W Datasheet

BFU530W transistor. Datasheet pdf. Equivalent

BFU530W Datasheet
Recommendation BFU530W Datasheet
Part BFU530W
Description NPN wideband silicon RF transistor
Feature BFU530W; 627 BFU530W NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. .
Manufacture NXP
Datasheet
Download BFU530W Datasheet




NXP BFU530W
BFU530W
NPN wideband silicon RF transistor
Rev. 1 — 13 January 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323
package.
The BFU530W is part of the BFU5 family of transistors, suitable for small signal to
medium power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
Maximum stable gain 18.5 dB at 900 MHz
11 GHz fT silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
VCB collector-base voltage open emitter
VCE collector-emitter voltage open base
shorted base
VEB emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tsp 87 C
hFE DC current gain
IC = 10 mA; VCE = 8 V
Cc collector capacitance VCB = 8 V; f = 1 MHz
fT transition frequency IC = 15 mA; VCE = 8 V; f = 900 MHz
Min Typ Max Unit
--
24 V
--
12 V
--
24 V
--
2V
- 10 40 mA
[1] -
-
450 mW
60 95 200
- 0.68 -
pF
- 11 -
GHz



NXP BFU530W
NXP Semiconductors
BFU530W
NPN wideband silicon RF transistor
Table 1. Quick reference data …continued
Tamb = 25 C unless otherwise specified
Symbol Parameter
Conditions
Gp(max)
NFmin
PL(1dB)
maximum power gain
minimum noise figure
output power at 1 dB gain
compression
IC = 10 mA; VCE = 8 V; f = 900 MHz
IC = 1 mA; VCE = 8 V; f = 900 MHz; S = opt
IC = 15 mA; VCE = 8 V; ZS = ZL = 50 ;
f = 900 MHz
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) = MSG.
2. Pinning information
Min
[2] -
-
-
Typ
18.5
0.6
10
Max
-
-
-
Unit
dB
dB
dBm
Table 2.
Pin
1
2
3
Discrete pinning
Description
base
emitter
collector
Simplified outline Graphic symbol





DDD
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFU530W - plastic surface-mounted package; 3 leads
OM7960
- Customer evaluation kit for BFU520W, BFU530W and BFU550W [1]
[1] The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU520W, BFU530W and BFU550W samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
Version
SOT323
-
Table 4. Marking
Type number
BFU530W
Marking
ZB*
Description
* = t : made in Malaysia
* = w : made in China
BFU530W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2014
© NXP B.V. 2014. All rights reserved.
2 of 22



NXP BFU530W
NXP Semiconductors
BFU530W
NPN wideband silicon RF transistor
5. Design support
Table 5. Available design support
Download from the BFU530W product information page on http://www.nxp.com.
Support item
Available
Remarks
Device models for Agilent EEsof EDA ADS yes
Based on Mextram device model.
SPICE model
yes Based on Gummel-Poon device
model.
S-parameters
yes
Noise parameters
yes
Customer evaluation kit
yes See Section 3 and Section 10.
Solder pattern
yes
Application notes
yes See Section 10.1 and Section 10.2.
6. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCB collector-base voltage
VCE collector-emitter voltage
open emitter
open base
shorted base
VEB
IC
Tstg
VESD
emitter-base voltage
collector current
storage temperature
electrostatic discharge voltage
open collector
Human Body Model (HBM) According to JEDEC
standard 22-A114E
Charged Device Model (CDM) According to
JEDEC standard 22-C101B
7. Recommended operating conditions
Min Max Unit
- 30 V
- 16 V
- 30 V
-3
V
- 65 mA
65 +150 C
- 150 V
- 2 kV
Table 7.
Symbol
VCB
VCE
Characteristics
Parameter
collector-base voltage
collector-emitter voltage
VEB emitter-base voltage
IC collector current
Pi input power
Tj junction temperature
Ptot total power dissipation
Conditions
open emitter
open base
shorted base
open collector
ZS = 50
Tsp 87 C
[1] Tsp is the temperature at the solder point of the collector lead.
Min Typ Max Unit
- - 24 V
- - 12 V
- - 24 V
--2
V
- - 40 mA
- - 10 dBm
40 -
+150 C
[1] - - 450 mW
BFU530W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 January 2014
© NXP B.V. 2014. All rights reserved.
3 of 22





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